scholarly journals Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 1-7 ◽  
Author(s):  
Wei Li ◽  
Chuan Seng Tan ◽  
P. Anantha ◽  
Kwang Hong Lee ◽  
Hao Dong Qiu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Sensing Applications

scholarly journals Study of silicon nitride O-ring resonator for gas-sensing applications

2020 ◽  
Vol 1695 ◽  
pp. 012124
Author(s):  
A Elmanova ◽  
P An ◽  
V Kovalyuk ◽  
A Golikov ◽  
I Elmanov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ring Resonator ◽  
Gas Sensing ◽  
Sensing Applications

Silicon-nitride waveguide-based integrated photonic circuits for medical diagnostic and other sensing applications

2019 ◽  
Author(s):  
Rainer Hainberger ◽  
Paul Muellner ◽  
Stefan Nevlacsil ◽  
Alejandro Maese-Novo ◽  
Florian Vogelbacher ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Photonic Circuits ◽  
Sensing Applications ◽  
Medical Diagnostic

Germanium-on-silicon nitride: A promising platform for mid-IR sensing applications

2017 ◽  
Author(s):  
Wei Li ◽  
P. Anantha ◽  
Kwang Hong Lee ◽  
Hao Dong Qiu ◽  
Xin Guo ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Sensing Applications

Biofunctionalized silicon nitride platform for sensing applications

2018 ◽  
Vol 102 ◽  
pp. 497-503 ◽  
Author(s):  
Hiofan Hoi ◽  
Salva S. Rezaie ◽  
Lu Gong ◽  
Payel Sen ◽  
Hongbo Zeng ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Sensing Applications

scholarly journals Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 865 ◽  
Author(s):  
Alfredo González-Fernández ◽  
Joan Juvert ◽  
Mariano Aceves-Mijares ◽  
Carlos Domínguez
Keyword(s):  
Silicon Nitride ◽  
Transition Zone ◽  
Quantum Confinement ◽  
Silicon Oxide ◽  
Lab On A Chip ◽  
Light Sources ◽  
Sensing Applications

In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.

PECVD Silicon Nitride Photonic Integrated Circuits and Key Building Blocks for Sensing Applications

2020 ◽  
Author(s):  
Rainer Hainberger ◽  
Paul Muellner ◽  
Stefan Nevlacsil ◽  
Moritz Eggeling ◽  
Alejandro Maese-Novo ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Building Blocks ◽  
Sensing Applications
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