scholarly journals Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 865 ◽  
Author(s):  
Alfredo González-Fernández ◽  
Joan Juvert ◽  
Mariano Aceves-Mijares ◽  
Carlos Domínguez
Keyword(s):  
Silicon Nitride ◽  
Transition Zone ◽  
Quantum Confinement ◽  
Silicon Oxide ◽  
Lab On A Chip ◽  
Light Sources ◽  
Sensing Applications

In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement–related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.

Silicon Nanocavity Based Light Sources

2011 ◽  
Vol 1305 ◽  
Author(s):  
Yiyang Gong ◽  
Satoshi Ishikawa ◽  
Szu-Lin Cheng ◽  
Yoshio Nishi ◽  
Selcuk Yerci ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Light Sources ◽  
Free Carrier Absorption ◽  
Cryogenic Temperatures ◽  
Enhanced Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Er Doped ◽  
Nanobeam Cavities

ABSTRACTWe develop Si-based nano-photonic devices for the control of light at the nano-scales. We design high quality (Q) factor photonic crystal nanobeam cavities for a variety of Si compatible materials with low index, such as silicon rich oxide and silicon nitride, all with Q > 9,000 and small mode volumes. We apply these cavity designs to active materials such as Sinanocrystal doped silicon oxide and Er doped silicon nitride. By placing emitters in these cavities, we demonstrate that the cavity enhances emission processes. We show that the free carrier absorption process is greatly enhanced in the nanobeam cavities at both room and cryogenic temperatures. In addition, we demonstrate that nanobeam cavities made of Er-doped amorphous silicon nitride have enhanced absorption and gain characteristics compared to earlier designs that included silicon in the cavity. Because of the reduced losses, we observe linewidth narrowing and material transparency at both room temperature and cryogenic temperatures.

scholarly journals Study of silicon nitride O-ring resonator for gas-sensing applications

2020 ◽  
Vol 1695 ◽  
pp. 012124
Author(s):  
A Elmanova ◽  
P An ◽  
V Kovalyuk ◽  
A Golikov ◽  
I Elmanov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ring Resonator ◽  
Gas Sensing ◽  
Sensing Applications

scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide

2000 ◽  
Vol 115 (12) ◽  
pp. 683-686 ◽  
Author(s):  
X.C Wu ◽  
W.H Song ◽  
B Zhao ◽  
W.D Huang ◽  
M.H Pu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide

Wear and Nanomechanical Studies of Silicon Oxide and Silicon Nitride Thin Films for MEMS Applications

1998 ◽  
pp. 579-589 ◽  
Author(s):  
Z. Rymuza ◽  
Z. Kusznierewicz ◽  
M. Misiak ◽  
K. Schmidt-Szałowski ◽  
Z. Rżanek-Boroch ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Oxide
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