Experimental Demonstration of Optically Determined Solar Cell Current Transport Efficiency Map

2016 ◽  
Vol 6 (2) ◽  
pp. 528-531 ◽  
Author(s):  
Amaury Delamarre ◽  
Laurent Lombez ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
Yoshiaki Nakano ◽  
...  
2018 ◽  
Vol 8 (6) ◽  
pp. 1767-1772 ◽  
Author(s):  
Aobo Ren ◽  
Hao Xu ◽  
Amaury Delamarre ◽  
Cai Liu ◽  
Lili Wu ◽  
...  

1991 ◽  
Vol 34 (6) ◽  
pp. 553-558
Author(s):  
F. Caldararu ◽  
M. Caldararu ◽  
S. Nan ◽  
D. Nicolaescu ◽  
S. Vasile

2013 ◽  
Vol 3 (2) ◽  
pp. 909-915 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi

2014 ◽  
Vol 7 (6) ◽  
pp. 1907-1912 ◽  
Author(s):  
Emily D. Kosten ◽  
Brendan M. Kayes ◽  
Harry A. Atwater

Enhanced open-circuit voltage demonstrated in a high quality GaAs solar cell by limiting the angles of emitted light from the cell.


1996 ◽  
Vol 420 ◽  
Author(s):  
J. Furlan ◽  
P. Popović ◽  
F. Smole ◽  
M. Topič

AbstractUsing suitable simplifying approximations inside the particular regions of a p-i a-Si/n c-Si heterojunction solar cell, the analytical expressions for the solar cell current-voltage characteristics are derived showing clearly the dominating first-order effects on solar cell performance. The derived closed form solutions indicate that in the useful forward voltage range the largest dark current component of this cell is the interface recombination current and that the main contribution to the photocurrent comes from the light generated holes in the c-Si substrate layer. The transfer of holes across the intrinsic layer and over the ΔEv barrier is strongly suppressed resulting in an attenuation of solar cell dark and photocurrent.


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