This paper reports on the gamma radiation-induced changes in thin oxide films deposited by thermal vacuum technique. Structures of various oxides thin films, such as In2O3, SiO and TeO2 and their mixtures in different proportions were studied. The influence of gamma radiation on In2O3/SiO films has resulted in significant changes in the microstructure of this film. Some kind of agglomerations with variable sizes in the range 0.5-3 µm has occurred. After a dose of 8160 µSv an
evidence of partial crystallisation was observed with X-ray diffraction. Structural changes in TeO2 thin film were explored by means of Raman spectroscopy. After they have been exposed to g- radiation, a strong peak appeared at 448.83 cm-1, indicating further transformation to g-TeO2 modification.
Effect of gamma radiation on electrical and optical properties of (TeO2)0·9 (In2O3)0·1 thin films