Low-Noise and Wide-Dynamic-Range ROIC With a Self-Selected Capacitor for SWIR Focal Plane Arrays

2017 ◽  
Vol 17 (1) ◽  
pp. 179-184 ◽  
Author(s):  
Yeong Seon Kim ◽  
Doo Hyung Woo ◽  
Young Min Jo ◽  
Sang Gu Kang ◽  
Hee Chul Lee
2018 ◽  
Vol 27 (07) ◽  
pp. 1850104 ◽  
Author(s):  
Yuwadee Sundarasaradula ◽  
Apinunt Thanachayanont

This paper presents the design and realization of a low-noise, low-power, wide dynamic range CMOS logarithmic amplifier for biomedical applications. The proposed amplifier is based on the true piecewise linear function by using progressive-compression parallel-summation architecture. A DC offset cancellation feedback loop is used to prevent output saturation and deteriorated input sensitivity from inherent DC offset voltages. The proposed logarithmic amplifier was designed and fabricated in a standard 0.18[Formula: see text][Formula: see text]m CMOS technology. The prototype chip includes six limiting amplifier stages and an on-chip bias generator, occupying a die area of 0.027[Formula: see text]mm2. The overall circuit consumes 9.75[Formula: see text][Formula: see text]W from a single 1.5[Formula: see text]V power supply voltage. Measured results showed that the prototype logarithmic amplifier exhibited an 80[Formula: see text]dB input dynamic range (from 10[Formula: see text][Formula: see text]V to 100[Formula: see text]mV), a bandwidth of 4[Formula: see text]Hz–10[Formula: see text]kHz, and a total input-referred noise of 5.52[Formula: see text][Formula: see text]V.


2021 ◽  
Author(s):  
Yi Zhuo ◽  
Wengao Lu ◽  
Shanzhe Yu ◽  
Ye Zhou ◽  
Jiaqi Kong ◽  
...  

2017 ◽  
Author(s):  
Oguz Altun ◽  
Ferhat Tasdemir ◽  
Omer Lutfi Nuzumlali ◽  
Reha Kepenek ◽  
Ercihan Inceturkmen ◽  
...  

2015 ◽  
Author(s):  
Sumeet Shrestha ◽  
Hiroki Kamehama ◽  
Shoji Kawahito ◽  
Keita Yasutomi ◽  
Keiichiro Kagawa ◽  
...  

2019 ◽  
Vol 279 ◽  
pp. 255-266 ◽  
Author(s):  
Alexandra Dudina ◽  
Florent Seichepine ◽  
Yihui Chen ◽  
Alexander Stettler ◽  
Andreas Hierlemann ◽  
...  

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.


1997 ◽  
Author(s):  
Ronald J. van der A ◽  
Ruud W. M. Hoogeveen ◽  
Hugo J. Spruijt ◽  
Albert P. H. Goede

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