scholarly journals Amorphous Silicon and Carbon Nanotubes Layered Thin-film Based Device for Temperature Sensing Application

2020 ◽  
pp. 1-1
Author(s):  
Vineet Rojwal ◽  
Monoj Kumar Singha ◽  
T.K. Mondal
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Amorphous Silicon ◽  
Temperature Sensing ◽  
Sensing Application ◽  
Layered Thin Film

Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

2018 ◽  
Vol 29 (10) ◽  
pp. 105404 ◽  
Author(s):  
Pramod M Rajanna ◽  
Evgenia P Gilshteyn ◽  
Timur Yagafarov ◽  
Alena K Aleekseeva ◽  
Anton S Anisimov ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Polymer Composite ◽  
Single Walled Carbon Nanotubes ◽  
Composite Thin Film ◽  
Silicon Solar Cells ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Synergistic Effect of Single-Walled Carbon Nanotubes and PEDOT:PSS in Thin Film Amorphous Silicon Hybrid Solar Cell

2017 ◽  
Vol 255 (1) ◽  
pp. 1700557 ◽  
Author(s):  
Alena A. Alekseeva ◽  
Pramod Mulbagal Rajanna ◽  
Anton S. Anisimov ◽  
Oleg Sergeev ◽  
Sergei Bereznev ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Solar Cell ◽  
Synergistic Effect ◽  
Amorphous Silicon ◽  
Single Walled Carbon Nanotubes ◽  
Hybrid Solar Cell ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

A New Scanning Thermal Microprobe

1997 ◽  
Vol 503 ◽  
Author(s):  
Yongxia Zhang ◽  
Yanwei Zhang ◽  
Juliana Blaser ◽  
T. S. Sriiram ◽  
R. B. Marcus
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thermal Response ◽  
Temperature Sensing ◽  
Thermal Sensor ◽  
Atomic Force ◽  
Thin Film Thermocouple ◽  
Processing Steps ◽  
Thermocouple Junction

ABSTRACTA thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an Atomic Force Microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. The thermal response over the range 25–s 4.5–rovolts per degree C and is linear.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process
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