A New Scanning Thermal Microprobe

1997 ◽  
Vol 503 ◽  
Author(s):  
Yongxia Zhang ◽  
Yanwei Zhang ◽  
Juliana Blaser ◽  
T. S. Sriiram ◽  
R. B. Marcus

ABSTRACTA thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an Atomic Force Microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. The thermal response over the range 25–s 4.5–rovolts per degree C and is linear.

Author(s):  
Anant Chimmalgi ◽  
Costas P. Grigoropoulos

The effectiveness of ultra-short pulsed laser radiation for high-precision material processing and surface micro-modification, owing to the minimal thermal and mechanical damage, has been shown. Micro/Nano structuring of thin films is gaining widespread importance owing to ever-increasing applications in a variety of fields. The present study details femtosecond laser interaction with ultra thin metallic films at the micro and nano scales. Results of Microablation studies, carried out with an 800nm wavelength, 80fs pulse duration, femtosecond laser focused tightly using a long working distance objective lens, are discussed. A parametric study of single shot ablation and subsequent atomic force microscope characterization of the ablation craters is presented. The formation of elevated convex hillock structures at low laser pulse energies and considerable delamination at higher energies evinces a stress driven modification mechanism. Further, nanostructuring results on thin films carried out with femtosecond laser in conjunction with an atomic force microscope are presented. Various nanofeatures were machined with high spatial resolution (∼10–12nm), flexibility and repeatability by utilizing the local field enhancement in the near-field of the scanning probe tip irradiated with the laser beam. Attempting to understand the modification mechanism and the physics involved, numerical simulation studies were performed to evaluate the field enhancement underneath the tip and the ‘femtosecond laser–thin film’ interaction dynamics in general. Possible applications of thin film structuring may be in the areas of high-resolution nanolithography, controlled nanodeposition, ultra high-density data storage, high-resolution mask production and repair, nanoelectronics, nanophotonics and various nanobiotechnology related applications.


2021 ◽  
Vol 21 (5) ◽  
pp. 3115-3122
Author(s):  
Amitabha Nath ◽  
Rahul Raman ◽  
Laishram Robindro Singh ◽  
Mitra Barun Sarkar

Glancing angle deposition (GLAD) oriented electron beam (e-beam) evaporation process has been employed to develop 1D In2O3 nanorod array over n-Si substrate. The morphology of as-deposited In2O3 thin film (∼70 nm) and GLAD 1D In2O3 nanorod array (∼400 nm) were explored using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM) analysis. The structural analysis were perceived by high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques. The clampdown of ∼4.4 fold photoluminescence (PL) emission intensity was observed for In2O3 nanorod array. Metallization were done to measure the current (I)–voltage (V) characteristics for n-Si/In2O3 thin film and n-Si/In2O3 nanorod devices. The In2O3 nanorod device displayed ∼2.2 fold enhancement in current conduction at −4.6 V and an averagely ∼1.1 fold augmentation in photosensitivity were also observed. The photoresponsivity of ∼28 μA/W, maximum specific detectivity of ∼9.9×107 Jones and low NEP of ∼4.5×10−12 W/√Hz was achieved for the In2O3 nanorod-based photodetectors. The maximum ∼2.5 fold high detectivity and ∼2.4 fold low noise equivalent power (NEP) were perceived for the 1D In2O3 nanorod array detector as compared to the bare In2O3 thin film detector.


2018 ◽  
Vol 280 ◽  
pp. 188-196 ◽  
Author(s):  
Nishan Khatri ◽  
Tithi Desai ◽  
Amit Rai ◽  
Pratik KC ◽  
Arden L. Moore

2018 ◽  
Vol 44 ◽  
pp. S233-S237 ◽  
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Wei Ren ◽  
Yantao Liu ◽  
Ming Liu ◽  
...  

1988 ◽  
Vol 102 ◽  
pp. 41
Author(s):  
E. Silver ◽  
C. Hailey ◽  
S. Labov ◽  
N. Madden ◽  
D. Landis ◽  
...  

The merits of microcalorimetry below 1°K for high resolution spectroscopy has become widely recognized on theoretical grounds. By combining the high efficiency, broadband spectral sensitivity of traditional photoelectric detectors with the high resolution capabilities characteristic of dispersive spectrometers, the microcalorimeter could potentially revolutionize spectroscopic measurements of astrophysical and laboratory plasmas. In actuality, however, the performance of prototype instruments has fallen short of theoretical predictions and practical detectors are still unavailable for use as laboratory and space-based instruments. These issues are currently being addressed by the new collaborative initiative between LLNL, LBL, U.C.I., U.C.B., and U.C.D.. Microcalorimeters of various types are being developed and tested at temperatures of 1.4, 0.3, and 0.1°K. These include monolithic devices made from NTD Germanium and composite configurations using sapphire substrates with temperature sensors fabricated from NTD Germanium, evaporative films of Germanium-Gold alloy, or material with superconducting transition edges. A new approache to low noise pulse counting electronics has been developed that allows the ultimate speed of the device to be determined solely by the detector thermal response and geometry. Our laboratory studies of the thermal and resistive properties of these and other candidate materials should enable us to characterize the pulse shape and subsequently predict the ultimate performance. We are building a compact adiabatic demagnetization refrigerator for conveniently reaching 0.1°K in the laboratory and for use in future satellite-borne missions. A description of this instrument together with results from our most recent experiments will be presented.


Author(s):  
Paul G. Kotula ◽  
C. Barry Carter

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.


Author(s):  
K. Ogura ◽  
H. Nishioka ◽  
N. Ikeo ◽  
T. Kanazawa ◽  
J. Teshima

Structural appraisal of thin film magnetic media is very important because their magnetic characters such as magnetic hysteresis and recording behaviors are drastically altered by the grain structure of the film. However, in general, the surface of thin film magnetic media of magnetic recording disk which is process completed is protected by several-nm thick sputtered carbon. Therefore, high-resolution observation of a cross-sectional plane of a disk is strongly required to see the fine structure of the thin film magnetic media. Additionally, observation of the top protection film is also very important in this field.Recently, several different process-completed magnetic disks were examined with a UHR-SEM, the JEOL JSM 890, which consisted of a field emission gun and a high-performance immerse lens. The disks were cut into approximately 10-mm squares, the bottom of these pieces were carved into more than half of the total thickness of the disks, and they were bent. There were many cracks on the bent disks. When these disks were observed with the UHR-SEM, it was very difficult to observe the fine structure of thin film magnetic media which appeared on the cracks, because of a very heavy contamination on the observing area.


Author(s):  
Kenneth Krieg ◽  
Richard Qi ◽  
Douglas Thomson ◽  
Greg Bridges

Abstract A contact probing system for surface imaging and real-time signal measurement of deep sub-micron integrated circuits is discussed. The probe fits on a standard probe-station and utilizes a conductive atomic force microscope tip to rapidly measure the surface topography and acquire real-time highfrequency signals from features as small as 0.18 micron. The micromachined probe structure minimizes parasitic coupling and the probe achieves a bandwidth greater than 3 GHz, with a capacitive loading of less than 120 fF. High-resolution images of submicron structures and waveforms acquired from high-speed devices are presented.


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