N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate
2011 ◽
Vol 32
(5)
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pp. 635-637
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2011 ◽
Vol 32
(12)
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pp. 124003
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2009 ◽
Vol 54
(20)
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pp. 3670-3673
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