High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

IEEE Electron Device Letters ◽

10.1109/led.2018.2812870 ◽

2018 ◽

Vol 39 (5) ◽

pp. 688-691 ◽

Author(s):

Min Hoe Cho ◽

Hyunju Seol ◽

Hoichang Yang ◽

Pil Sang Yun ◽

Jong Uk Bae ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Atomic Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Layer Deposition ◽

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Hybrid Passivation for Foldable Indium Gallium Zinc Oxide Thin‐Film Transistors Mediated by Low‐Temperature and Low‐Damage Parylene‐C/Atomic Layer Deposition‐AlO x Coating

physica status solidi (a) ◽

10.1002/pssa.202070040 ◽

2020 ◽

Vol 217 (12) ◽

pp. 2070040

Author(s):

Shijie Zhan ◽

Soodeok Han ◽

Sang Yun Bang ◽

Benxuan Li ◽

Young Tea Chun ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Atomic Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Layer Deposition ◽

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Hybrid Passivation for Foldable Indium Gallium Zinc Oxide Thin‐Film Transistors Mediated by Low‐Temperature and Low‐Damage Parylene‐C/Atomic Layer Deposition‐AlO x Coating

physica status solidi (a) ◽

10.1002/pssa.201900832 ◽

2019 ◽

Vol 217 (12) ◽

pp. 1900832 ◽

Author(s):

Shijie Zhan ◽

Soodeok Han ◽

Sang Yun Bang ◽

Benxuan Li ◽

Young Tea Chun ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Atomic Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Layer Deposition ◽

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High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF07 ◽

Author(s):

Yu Tian ◽

Dedong Han ◽

Suoming Zhang ◽

Fuqing Huang ◽

Dongfang Shan ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

Procedia Manufacturing ◽

10.1016/j.promfg.2019.02.278 ◽

2019 ◽

Vol 32 ◽

pp. 729-733 ◽

Author(s):

Abdelhafid Marroun ◽

Naima Amar Touhami ◽

Taj-eddin El Hamadi ◽

Moustapha El Bakkali

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Anodic Aluminum Oxide ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Anodic Aluminum ◽

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High-performance amorphous indium–gallium–zinc oxide thin-film transistors with polymer gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2012.03.101 ◽

2012 ◽

Vol 520 (16) ◽

pp. 5455-5458 ◽

Author(s):

C.J. Chiu ◽

S.P. Chang ◽

S.J. Chang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectric ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

Applied Physics Letters ◽

10.1063/1.2975959 ◽

2008 ◽

Vol 93 (8) ◽

pp. 082102 ◽

Author(s):

Wantae Lim ◽

Jung Hun Jang ◽

S.-H. Kim ◽

D. P. Norton ◽

V Craciun ◽

...

Keyword(s):

Thin Film ◽

Polyethylene Terephthalate ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation

Current Applied Physics ◽

10.1016/j.cap.2018.06.003 ◽

2018 ◽

Vol 18 (9) ◽

pp. 1080-1086 ◽

Author(s):

Min-Soo Kang ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectric ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With $\hbox{HfO}_{x}\hbox{N}_{y}/\hbox{HfO}_{2}/\hbox{HfO}_{x}\hbox{N}_{y}$ Tristack Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2010.2089426 ◽

2011 ◽

Vol 32 (1) ◽

pp. 42-44 ◽

Author(s):

Longyan Yuan ◽

Xiao Zou ◽

Guojia Fang ◽

Jiawei Wan ◽

Hai Zhou ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectrics ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2115248 ◽

2011 ◽

Vol 58 (5) ◽

pp. 1452-1455 ◽

Author(s):

Linfeng Lan ◽

Junbiao Peng

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Anodic Aluminum Oxide ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Anodic Aluminum ◽

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Erratum: “High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment” [Appl. Phys. Lett. 100, 202106 (2012)]

Applied Physics Letters ◽

10.1063/1.4902402 ◽

2014 ◽

Vol 105 (24) ◽

pp. 249902

Author(s):

Pradipta K. Nayak ◽

M. N. Hedhili ◽

Dongkyu Cha ◽

H. N. Alshareef

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Oxygen Plasma ◽

Oxide Thin Film ◽

Oxygen Plasma Treatment ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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