Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications

2021 ◽  
Vol 42 (4) ◽  
pp. 517-520
Author(s):  
Seongho Kim ◽  
Seung Hwan Lee ◽  
Min Ju Kim ◽  
Wan Sik Hwang ◽  
Hyun Soo Jin ◽  
...  
Open Physics ◽  
2005 ◽  
Vol 3 (2) ◽  
Author(s):  
Xi Yang ◽  
Andrew Beckwith ◽  
Mikhail Strikovski

AbstractWe deposited epitaxial thin films of Morphotropic Phase Boundary (MPB) Pb0.65Ba0.35Nb2O6 (PBN:65) on MgO substrates using pulsed laser deposition. Afterwards, a novel transmission optical experiment was developed to measure the electric field-induced bending angle of the thin film sample using a divergent incident light. From which the electric field-induced strain was obtained, and it was used to calculate the electrostrictive constant of the PBN thin film. The result is 0.000875 μm2/V2, and it is consistent with what we measured in the reflection experiment


Sign in / Sign up

Export Citation Format

Share Document