Pixel Circuit with P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation

2021 ◽  
pp. 1-1
Author(s):  
Jongsu Oh ◽  
Jin-Ho Kim ◽  
Jungwoo Lee ◽  
Eun Kyo Jung ◽  
Donggun Oh ◽  
...  
2006 ◽  
Vol 910 ◽  
Author(s):  
Ta-Chuan Liao ◽  
Chun-Yu Wu ◽  
Feng-Tso Chien ◽  
Chun-Chien Tsai ◽  
Hsiu-Hsin Chen ◽  
...  

AbstractA novel T-shaped-gated (T-Gate) polycrystalline silicon thin-film transistor (poly-Si TFT) with vacuum gaps has been proposed and fabricated only with a simple process. The T-Gate structure is formed only by a selective undercut-etching technology of the Mo/Al bi-layers. Then, vacuum gaps are in-situ embedded in this T-Gate structure subsequent to capping the SiH4-based passivation oxide under the vacuum process chamber. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher maximum on-off current ratio of 4.6 e107, and the lower off-state leakage current at VGS = -10 V and VDS = 5V of about 100 times less than that of the conventional one. It is attributed to the additional undoped offset region and the vacuum gap to reduce the maximum electric field at drain junction while ascribed to the sub-gate to maintain the on-current. Therefore, such a T-Gate poly-Si TFT is very suitable for the applications and manufacturing in active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs).


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