A Compact W-Band CMOS Power Amplifier With Gain Boosting and Short-Circuited Stub Matching for High Power and High Efficiency Operation

2011 ◽  
Vol 21 (2) ◽  
pp. 98-100 ◽  
Author(s):  
Doris A. Chan ◽  
Milton Feng
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
W Band

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

X-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation

2020 ◽  
Vol 30 (9) ◽  
pp. 884-887
Author(s):  
Wen-Rao Fang ◽  
Wen-Hua Huang ◽  
Wen-Hui Huang ◽  
Jia-Wei Li ◽  
Chao Fu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
X Band

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 243-248
Author(s):  
Min Liu ◽  
Panpan Xu ◽  
Jincan Zhang ◽  
Bo Liu ◽  
Liwen Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Common Source ◽  
Power Performance ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT

2009 ◽  
Author(s):  
Eigo Kuwata ◽  
Koji Yamanaka ◽  
Tasuku Kirikoshi ◽  
Akira Inoue ◽  
Yoshihito Hirano
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Gan Hemt ◽  
High Power Amplifier ◽  
Relative Bandwidth ◽  
Ku Band

High power and high efficiency Ka band power amplifier

2015 ◽  
Author(s):  
Salah Din ◽  
Mike Wojtowicz ◽  
Mansoor Siddiqui
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Ka Band ◽  
Band Power

Gate Bias Adaptation of Doherty Power Amplifier for High Efficiency and High Power

2015 ◽  
Vol 25 (2) ◽  
pp. 136-138 ◽  
Author(s):  
Yunsik Park ◽  
Juyeon Lee ◽  
Seunghoon Jee ◽  
Seokhyeon Kim ◽  
Bumman Kim
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Gate Bias ◽  
Doherty Power Amplifier

A high power and high efficiency power amplifier for local multipoint distribution service

2002 ◽  
Author(s):  
M.K. Siddiqui ◽  
A.K. Sharma ◽  
L.G. Callejo ◽  
Chung-Hsu Chen ◽  
Kin Tan ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency
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