A CMOS Low-Power Cross-Coupled Immittance-Converter Transimpedance Amplifier

2015 ◽  
Vol 25 (6) ◽  
pp. 403-405 ◽  
Author(s):  
M. H. Taghavi ◽  
L. Belostotski ◽  
J. W. Haslett
2021 ◽  
Author(s):  
Mehrdad Amirkhan Dehkordi ◽  
Seyed Mehdi Mirsanei ◽  
Soorena Zohoori

2020 ◽  
Vol 7 (4) ◽  
pp. 041407
Author(s):  
L. Le Guevel ◽  
G. Billiot ◽  
B. Cardoso Paz ◽  
M. L. V. Tagliaferri ◽  
S. De Franceschi ◽  
...  

Author(s):  
Hossein Mohammadnezhad ◽  
Alireza Karimi Bidhendi ◽  
Michael M. Green ◽  
Payam Heydari

Author(s):  
Urvashi Bansal ◽  
Maneesha Gupta ◽  
Niranjan Raj

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.


Sign in / Sign up

Export Citation Format

Share Document