Passively Mode-Locked Quantum-Well Laser With a Saturable Absorber Having Gradually Varied Bandgap

2017 ◽  
Vol 29 (11) ◽  
pp. 889-892 ◽  
Author(s):  
Junjie Xu ◽  
Song Liang ◽  
Songtao Liu ◽  
Lijun Qiao ◽  
Siwei Sun ◽  
...  
Keyword(s):  
Quantum Well ◽  
Saturable Absorber ◽  
Quantum Well Laser

Passively mode-locked quantum-well laser with a saturable absorber having gradually varied bandgap

2017 ◽  
Author(s):  
Junjie Xu ◽  
Song Liang ◽  
Songtao Liu ◽  
Lijun Qiao ◽  
Siwei Sun ◽  
...  
Keyword(s):  
Quantum Well ◽  
Saturable Absorber ◽  
Quantum Well Laser

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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