Monolithic Integration of Plasmonic Meta-Material Absorber with CMOS-MEMs Infrared Sensor for Responsivity Enhancement and Human Detection Application

2020 ◽  
Author(s):  
Pen-Sheng Lin ◽  
Ting-Wei Shen ◽  
Kai-Chieh Chang ◽  
Weileun Fang
Keyword(s):  
Monolithic Integration ◽  
Human Detection ◽  
Infrared Sensor ◽  
Cmos Mems

A double-end-beam based infrared device fabricated using CMOS-MEMS process

Sensor Review ◽  
2016 ◽  
Vol 36 (3) ◽  
pp. 240-248 ◽  
Author(s):  
Cheng Lei ◽  
Haiyang Mao ◽  
Yudong Yang ◽  
Wen Ou ◽  
Chenyang Xue ◽  
...  
Keyword(s):  
Design Methodology ◽  
Infrared Sensor ◽  
Beam Structure ◽  
Ir Detectors ◽  
Micro Electro Mechanical Systems ◽  
Content Type ◽  
High Duty Cycle ◽  
Cmos Mems ◽  
And Performance ◽  
Mems Process

Purpose Thermopile infrared (IR) detectors are one of the most important IR devices. Considering that the surface area of conventional four-end-beam (FEB)-based thermopile devices cannot be effectively used and the performance of this type of devices is relatively low, this paper aims to present a double-end-beam (DEB)-based thermopile device with high duty cycle and performance. The paper aims to discuss these issues. Design/methodology/approach Numerical analysis was conducted to show the advantages of the DEB-based thermopile devices. Findings Structural size of the DEB-based thermopiles may be further scaled down and maintain relatively higher responsivity and detectivity when compared with the FEB-based thermopiles. The authors characterized the thermoelectric properties of the device proposed in this paper, which achieves a responsivity of 1,151.14 V/W, a detectivity of 4.15 × 108 cm Hz1/2/W and a response time of 14.46 ms sensor based on DEB structure. Orginality/value The paper proposed a micro electro mechanical systems (MEMS) thermopile infrared sensor based on double-end-beam structure.

Monolithic integration of capacitive sensors using a double-side CMOS MEMS post process

2008 ◽  
Vol 19 (1) ◽  
pp. 015023 ◽  
Author(s):  
Chih-Ming Sun ◽  
Chuanwei Wang ◽  
Ming-Han Tsai ◽  
Hsieh-Shen Hsieh ◽  
Weileun Fang
Keyword(s):  
Monolithic Integration ◽  
Capacitive Sensors ◽  
Post Process ◽  
Cmos Mems

Design and Fabrication of a CMOS-MEMS Thermoelectric Infrared Microsensor

2005 ◽  
Author(s):  
Ke-Min Liao ◽  
Da-Hong Chiou ◽  
Keng-Shun Lin ◽  
Rongshun Chen
Keyword(s):  
Fill Factor ◽  
Low Noise ◽  
Sensor Response ◽  
Infrared Sensor ◽  
Element Analysis ◽  
Broad Bandwidth ◽  
Cmos Mems ◽  
Transfer Behavior ◽  
Noise Equivalent Temperature Difference ◽  
Cmos Ic

This paper describes a thermoelectric infrared (IR) microsensor which is designed and fabricated using commercial CMOS IC processes with subsequent bulk-micromachining technology. The key feature of this sensor is that the thermocouples have been placed under the IR absorbing membrane. This infrared microsensor has the advantages of high fill factor, low noise equivalent temperature difference (NETD), and broad bandwidth. Finite element analysis has been conducted to simulate the heat transfer behavior of the device and to demonstrate the feasibility of our design. Besides, the experimental setup has been built for measuring the infrared sensor response. The results show a measured responsivity of 63 V/W and a thermal time constant of 10 ms.

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