Study on compatible CMOS-MEMS process with surface micromachining for the application of monolithic integration

Author(s):  
Danqi Zhao ◽  
Xian Huang ◽  
Jun He ◽  
Li Zhang ◽  
Peng Liu ◽  
...  
2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Chunhua Cai ◽  
Junyan Tan ◽  
Di Hua ◽  
Ming Qin ◽  
Nianfang Zhu

2009 ◽  
Vol 74 ◽  
pp. 231-234 ◽  
Author(s):  
Muhamad Ramdzan Buyong ◽  
Norazreen Abd Aziz ◽  
Burhanuddin Yeop Majlis

In the world of MEMS processing today, fabrications of membrane are performed using bulk micromachining (BMM). However these techniques not easiest to integrate with CMOS standard process due to not compatible of the processing flow. An attractive alternative deployment of surface micromachining (SMM). There is a trend to use surface micromachining to their advantage of simplicity in design and fabrication process compatibility. This paper presents process development of thin layer membrane for very low capacitive pressure sensor application. The structure of the membrane consists of parallel plate which both top and bottom electrodes were fixed at both sides. Utilizing CMOS MEMS process compatible fabrication of the thin layer membrane involved in three stages; i) hole opening etch, ii) sacrificial intermediate oxide release etch and iii) closing of etch holes. Therefore seals-off process characterization and optimization experiment are presented in this paper, will spur advancement in the development of a CMOS MEMS product for very low capacitive pressure sensor.


2011 ◽  
Vol 1299 ◽  
Author(s):  
Prasenjit Ray ◽  
V. Seena ◽  
Prakash R. Apte ◽  
Ramgopal Rao

ABSTRACTMEMS community is increasingly using SU-8 as a structural material because it is self-patternable, compliant and needs a low thermal budget. While the exposed layers act as the structural layers, the unexposed SU-8 layers can act as the sacrificial layers, thus making it similar to a surface micromachining process. A sequence of exposed and unexposed SU-8 layers should lead to the development of a SU-8 based MEMS chip integrated with a pre-processed CMOS wafer. A process consisting of optical lithography to obtain SU-8 structures on a CMOS wafer is described in this paper.


2006 ◽  
Author(s):  
Y. R. Huang ◽  
H. M. Tai ◽  
H. P. Chou
Keyword(s):  

2018 ◽  
Vol 773 ◽  
pp. 152-156
Author(s):  
Chih Hsiung Shen ◽  
Shu Jung Chen ◽  
Shih Hao Lin

This paper proposes a new vacuum sensor with CMOS Metal-N-Poly thermoelectric materials which works for both thermoelectric sensing and resistive heating. A new method of vacuum measurement with self-heating is proposed based on the dual phases of heating and sensing for the same element which is realized with CMOS thermoelectric sensor. Using the TSMC 0.35 μm CMOS-MEMS process, the proposed thermoelectric sensor is designed and fabricated with standard CMOS materials of the 4th metal and N-polysilicon to form 64 pairs of central-symmetrical thermocouples. There is an air convection-sensing area at the center of membrane and is filled with array of micro-through-holes to enhance the effect of heat convection. When the air molecules move through the array of hole, the heat exchange will take away the heat to cause a temperature drop of sensing area which gives a weak voltage between the cold and hot end of the thermocouples. The heating of thermopile itself is designed at the first phase and sensing the output voltage at the second phase subsequently. According to a careful investigation of the measurement with a wide range of 10m~10k torr, our proposed sensing scheme based on a thermoelectric type sensor is proved for practical vacuum detection and most of all it is proved as a new approach to use a commercial thermopile without heater, which is easier to include than a special custom design.


Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 15 ◽  
Author(s):  
Shu-Jung Chen ◽  
Yung-Chuan Wu

This paper introduces a thermoelectric-type sensor with a built-in heater as an alternative approach to the measurement of vacuum pressure based on frequency modulation. The proposed sensor is fabricated using the TSMC (Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan) 0.35 μm complementary metal-oxide-semiconductor-microelectro-mechanical systems (CMOS–MEMS) process with thermocouples positioned central-symmetrically. The proposed frequency modulation technique involves locking the sensor output signal at a given frequency using a phase-lock-loop (PLL) amplifier to increase the signal-to-noise ratio (SNR) and thereby enhance the sensitivity of vacuum measurements. An improved first harmonic signal detection based on asymmetrical applied heating gives a precise measurement. Following calibration, the output voltage is in good agreement with the calibration values, resulting in an error of 0.25% under pressures between 0.1–10 Torr.


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