Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction
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2015 ◽
Vol 36
(10)
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pp. 1040-1043
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2015 ◽
Vol 36
(12)
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pp. 1332-1335
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2009 ◽
Vol 48
(1)
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pp. 10303
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2018 ◽
Vol 39
(2)
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pp. 200-203
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