Low-frequency noise in amorphous indium–gallium–zinc oxide thin-film transistors with an inverse staggered structure and an SiO2gate insulator

2014 ◽  
Vol 53 (5) ◽  
pp. 054201
Author(s):  
Jae Chul Park ◽  
Ho-Nyeon Lee
2009 ◽  
Vol 30 (5) ◽  
pp. 505-507 ◽  
Author(s):  
Jeong-Min Lee ◽  
Woo-Seok Cheong ◽  
Chi-Sun Hwang ◽  
In-Tak Cho ◽  
Hyuck-In Kwon ◽  
...  

2010 ◽  
Vol 97 (12) ◽  
pp. 122104 ◽  
Author(s):  
Jae Chul Park ◽  
Sang Wook Kim ◽  
Chang Jung Kim ◽  
Sungchul Kim ◽  
Dae Hwan Kim ◽  
...  

2014 ◽  
Vol 63 (9) ◽  
pp. 098503
Author(s):  
Liu Yuan ◽  
Wu Wei-Jing ◽  
Li Bin ◽  
En Yun-Fei ◽  
Wang Lei ◽  
...  

2019 ◽  
Vol 33 (17) ◽  
pp. 1950185
Author(s):  
Yuan Liu ◽  
Shu-Ting Cai ◽  
Xiao-Ming Xiong ◽  
Wei-Jun Li

Low frequency noise in the indium–zinc oxide thin-film transistors (IZO TFTs) at low drain voltage is investigated in this paper. First, the contact resistance is extracted from transfer characteristics. By analyzing the noise behavior under different bias conditions, the measured noises in IZO TFTs have been separated into contributions from the channel and contacts. Determined by the channel and the contact, the normalized noise varied with two slopes ([Formula: see text] and 2) with the increment of effective gate voltage. Moreover, the values of flat-band voltage noise spectral density and Coulomb scattering parameter have been extracted. By considering contact resistance, the normalized noise has also been modeled by the use of carrier number with the correlated mobility fluctuation [Formula: see text] model.


2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  

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