Low-frequency noise in amorphous indium–gallium–zinc oxide thin-film transistors with an inverse staggered structure and an SiO2gate insulator
2009 ◽
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pp. 505-507
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2019 ◽
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pp. 2192-2197
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2018 ◽
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2015 ◽
Vol 135
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pp. 192-198
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