Biases and Uncertainties of RF Noise Power Measurements

2021 ◽  
Vol 24 (7) ◽  
pp. 50-62
Author(s):  
Brett T. Walkenhorst ◽  
Ryan T. Cutshall ◽  
Daniel R. Frey
2018 ◽  
Vol 66 (5) ◽  
pp. 2258-2264 ◽  
Author(s):  
Walter Ciccognani ◽  
Sergio Colangeli ◽  
Antonio Serino ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5615
Author(s):  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Lorenzo Pace ◽  
Antonio Serino ◽  
...  

This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significant marginal improvement (as compared to forward measurements only) it is expected that the device under test should appreciably deviate from unidirectionality. For this reason, the source/load-pull technique is applied to frequencies at which the considered devices are still usable but their reverse noise factor exhibits a measurable dependence on the output terminations. Details on the test bench set up to the purpose, covering the 20–40 GHz frequency range, are provided. A characterization campaign on a 60 nm gate length, 4×35 µm GaN-on-Si HEMT fabricated by OMMIC is illustrated.


2005 ◽  
Author(s):  
Luca Callegaro ◽  
Marco Pisani

1990 ◽  
Vol 172 (1-2) ◽  
pp. 1-12 ◽  
Author(s):  
Yi Song ◽  
Anupam Misra ◽  
Yue Cao ◽  
Antonio Querubin ◽  
Xiao-Dong Chen ◽  
...  

1997 ◽  
Vol 46 (2) ◽  
pp. 477-481 ◽  
Author(s):  
W. Kessel ◽  
F.-I. Buchholz ◽  
M.I. Khabipov ◽  
R. Dolata ◽  
J. Niemeyer

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