A new SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation

2002 ◽  
Author(s):  
Ke Lu ◽  
P. Perry ◽  
T.J. Brazil
Keyword(s):  
Circuit Simulation ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Small Signal ◽  
Large Signal ◽  
Transistor Model

Large Signal Model of Heterojunction Bipolar Transistor InP/InGaAs as an Optoelectronic Mixer

2015 ◽  
Vol 67 (3) ◽  
Author(s):  
N. A. Shaharuddin ◽  
S. M. Idrus ◽  
S. Isaak ◽  
N. A. Mohamed ◽  
N. A. A. Yusni
Keyword(s):  
Radio Over Fiber ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Large Signal ◽  
Signal Model ◽  
Conversion Frequency ◽  
Broadband Radio ◽  
Spectral Performance

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion.

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