A very high speed switched-reluctance starter-generator for aircraft engine applications

Author(s):  
S.R. MacMinn ◽  
W.D. Jones





2010 ◽  
Vol 23 (2) ◽  
pp. 216-226 ◽  
Author(s):  
Song Shoujun ◽  
Liu Weiguo ◽  
Dieter Peitsch ◽  
Uwe Schaefer


Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.



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