Structural changes in silicon-on-insulator material during post-implantation annealing
1986 ◽
Vol 44
◽
pp. 736-737
Keyword(s):
Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.
1987 ◽
Vol 45
◽
pp. 254-255
1995 ◽
Vol 1
(4)
◽
pp. 7-13
◽
1990 ◽
Vol 01
(03n04)
◽
pp. 245-301
◽
Keyword(s):