Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Author(s):  
Aurele Durand ◽  
Victor Boureau ◽  
Delphine Lecunff ◽  
Axel Hourtane ◽  
Daniel Benoit ◽  
...  
2017 ◽  
Vol 70 ◽  
pp. 99-104 ◽  
Author(s):  
Aurèle Durand ◽  
Melissa Kaufling ◽  
Delphine Le-Cunff ◽  
Denis Rouchon ◽  
Patrice Gergaud

2019 ◽  
Vol 64 (4) ◽  
pp. 545-552 ◽  
Author(s):  
A. Yu. Seregin ◽  
P. A. Prosekov ◽  
F. N. Chukhovsky ◽  
Yu. A. Volkovsky ◽  
A. E. Blagov ◽  
...  

1996 ◽  
Vol 89 (2) ◽  
pp. 115-127 ◽  
Author(s):  
G. Bauer ◽  
J.H. Li ◽  
V. Holy

1998 ◽  
Vol 83 (1) ◽  
pp. 126-131 ◽  
Author(s):  
A. A. Darhuber ◽  
G. Bauer ◽  
P. D. Wang ◽  
C. M. Sotomayor Torres

1997 ◽  
Vol 472 ◽  
Author(s):  
P. Kidd ◽  
P. F. Fewster

ABSTRACTWe apply the technique of High Resolution X-ray Reciprocal Space Mapping (HRRSM) to the study of wavy layers in InGaAs multilayer thin films on InP substrates. By accurately measuring the positions of the layer Bragg peaks in reciprocal space we obtain measurements of the compositions and residual coherency strains in the layers. We discuss the contributions to the diffuse scatter around the Bragg peaks from factors such as lattice tilts and interface roughness. By modelling the shapes of the diffraction profiles we obtain measurements of mosaic block size both perpendicular and parallel to the multilayer/substrate interface. We conclude that the wavy interface morphology arises predominantly from layer thickness variations rather than lattice tilts.


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