Experimental and Theoretical Study of the Triple-Crystal High-Resolution X-Ray Diffraction Scheme in Reciprocal Space Mapping Technique

AbstractEpitaxial (001)-, (116)- and pseudo (103)-oriented Sr0.35Bi2.2Ta2O9 (SBT (0.35/2.2/2.0)) films were successfully grown on (001), (110) and (111) SrTiO3 substrates, respectively. High-resolution X-ray diffraction reciprocal space mapping (HRXRD-RSM) measurements and pole figure measurements clearly indicated that the (116)-oriented SBT (0.35/2.2/2.0) film consisted of two growth domains those c-axis are separated 180° apart in in-plane and pseudo (103)-oriented SBT film consisted of three growth domains those c-axis are separated 120° apart in in-plane. Moreover, lattice parameter measurements indicated that SBT films grew in fully relaxed state.

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Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

MRS Proceedings ◽

10.1557/proc-798-y5.40 ◽

2003 ◽

Vol 798 ◽

Cited By ~ 2

Author(s):

K. Tachibana ◽

Y. Harada ◽

S. Saito ◽

S. Nunoue ◽

H. Katsuno ◽

...

Keyword(s):

Output Power ◽

Sapphire Substrate ◽

Light Output ◽

Space Mapping ◽

Reciprocal Space ◽

Epitaxial Layers ◽

X Ray Diffraction ◽

Light Output Power ◽

Reciprocal Space Mapping ◽

X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

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A novel multi-detection technique for three-dimensional reciprocal-space mapping in grazing-incidence X-ray diffraction

Journal of Synchrotron Radiation ◽

10.1107/s0909049508023856 ◽

2008 ◽

Vol 15 (6) ◽

pp. 549-557 ◽

Cited By ~ 23

Author(s):

M. Schmidbauer ◽

P. Schäfer ◽

S. Besedin ◽

D. Grigoriev ◽

R. Köhler ◽

...

Keyword(s):

Three Dimensional ◽

Grazing Incidence ◽

Space Mapping ◽

Reciprocal Space ◽

Detection Technique ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

X Ray

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Preparation of epitaxial La1−xSrxMnO3 films on SrTiO3(001) by dipping-pyrolysis process

Journal of Materials Research ◽

10.1557/jmr.1997.0077 ◽

1997 ◽

Vol 12 (2) ◽

pp. 541-545 ◽

Cited By ~ 31

Author(s):

T. Manabe ◽

I. Yamaguchi ◽

W. Kondo ◽

S. Mizuta ◽

T. Kumagai

Keyword(s):

Heat Treatment ◽

Single Crystals ◽

Space Mapping ◽

Reciprocal Space ◽

Pyrolysis Process ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

X Ray ◽

Metallic Conduction ◽

Conduction Behavior

La1−xSrxMnO3 (LSMO) (x = 0−0.3) films were prepared on SrTiO3(001) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were obtained by heat treatment at 800–1200 °C; the fluctuation of alignment of these films, evaluated by reciprocal-space mapping of asymmetric x-ray diffraction, was markedly small, as comparable to that of the substrates. The LSMO films with x = 0.1−0.3 showed metallic conduction behavior at 25–300 K, and the resistivity was as low as that of LSMO single crystals, e.g., 4.5 × 10−4 Ω · cm at 150 K for the film with x = 0.3.

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