Tribological properties of polycrystalline diamond films prepared by hot-filament chemical vapor deposition methods

Author(s):  
Hiroshi Nagasaka ◽  
Keita Ito ◽  
Jo Mori ◽  
Tetsuhide Shimizu ◽  
Shinya Sasaki
1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  

2017 ◽  
Vol 23 (S1) ◽  
pp. 2272-2273 ◽  
Author(s):  
M.J. Arellano-Jimenez ◽  
J. J. Alcantar-Peña ◽  
J.E. Ortega Aguilar ◽  
M.J. Yacaman ◽  
O. Auciello

1994 ◽  
Vol 339 ◽  
Author(s):  
D. Ganesan ◽  
S. C. Sharma

ABSTRACTWe have conducted x-ray diffraction, Raman spectroscopy, and scanning electron microscopy analyses of diamond films grown by hot filament assisted chemical vapor deposition (HFCVD). We present results on the relative abundance of the (111), (220) and (400) faces in polycrystalline diamond films as functions of CH4 concentration. The intensity of the (111) peak can be varied from about 20% to 60% by adjusting CH4 in CH4/H2 mixtures. We also present results on preferred orientation in films grown under varying hydrogen treatments. We discuss correlations between the preferred orientation, FWHM of the diamond peak in the Raman spectrum, and surface morphology of the films.


1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


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