Device physics and modeling of integrated power devices

1987 ◽  
Author(s):  
M.S. Adler ◽  
D.N. Pattanayak ◽  
B.J. Baliga ◽  
V.A.K. Temple ◽  
H.R. Chang
Keyword(s):  
Device Physics ◽  
Power Devices

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

2016 ◽  
Vol 858 ◽  
pp. 177-180 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Tony Witt ◽  
Seungchul Lee ◽  
Richard Woodin
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Power Device ◽  
Device Physics ◽  
Optimized Design ◽  
Power Devices ◽  
Process Yield ◽  
Technological Readiness ◽  
The Impact

Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.

Carbon Nanotube and Graphene Device Physics

2009 ◽  
Author(s):  
H.-S. Philip Wong ◽  
Deji Akinwande
Keyword(s):  
Carbon Nanotube ◽  
Device Physics

Defect engineering in SiC technology for high-voltage power devices

2020 ◽  
Vol 13 (12) ◽  
pp. 120101
Author(s):  
Tsunenobu Kimoto ◽  
Heiji Watanabe
Keyword(s):  
High Voltage ◽  
Defect Engineering ◽  
Power Devices

Photonic Silicon Device Physics.

1995 ◽  
Author(s):  
S. D. Russell ◽  
W. B. Dubbelday ◽  
R. L. Shimabukuro ◽  
P. R. De La Houssaye
Keyword(s):  
Device Physics ◽  
Silicon Device
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