Compact and efficient silicon nanowire to slot waveguide coupler

Author(s):  
S. Hamed Mirsadeghi ◽  
Ellen Schelew ◽  
Jeff F. Young
2015 ◽  
Vol 23 (3) ◽  
pp. 3690 ◽  
Author(s):  
Zheqi Wang ◽  
Lei Shi ◽  
Xinbiao Xu ◽  
Jihua Zhang ◽  
Jiali Zhang ◽  
...  

2020 ◽  
Vol 59 (26) ◽  
pp. 7821 ◽  
Author(s):  
M. A. Butt ◽  
S. N. Khonina ◽  
N. L. Kazanskiy

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2338
Author(s):  
Eduard Ioudashkin ◽  
Dror Malka

One of the most common techniques for increasing data bitrate using the telecommunication system is to use dense wavelength division multiplexing (DWDM). However, the implementation of DWDM with more channels requires additional waveguide coupler devices and greater energy consumption, which can limit the system performances. To solve these issues, we propose a new approach for designing the demultiplexer using angled multimode interference (AMMI) in gallium nitride (GaN)–silica (SiO2) slot waveguide structures. SiO2 and GaN materials are selected for confining the infrared light inside the GaN areas under the transverse electric (TE) field mode. The results show that, after 3.56 mm light propagation, three infrared wavelengths in the C-band can be demultiplexed using a single AMMI coupler with a power loss of 1.31 to 2.44 dB, large bandwidth of 12 to 13.69 nm, very low power back reflection of 47.64 to 48.76 dB, and crosstalk of −12.67 to −15.62 dB. Thus, the proposed design has the potential for improving performances in the telecommunication system that works with DWDM technology.


2021 ◽  
Author(s):  
RITU RAJ SINGH ◽  
Vishnu Priye

Abstract Theoretical and numerical mode estimation performed on Silicon Nanowire Optical Rectangular Waveguide (SNORW) is presented for on-chip communication in photonic integrated circuits. The propagation behavior of electric and magnetic fields is investigated, where zeroth order mode is found dominating inside the nanoslot region of SNORW for the circularly symmetric quasi-TE mode to propagate. This SNORW structure supports hybrid mode, which derives its behavioral root from the rectangular waveguide and functional root from the slot waveguide. In periodic silicon nanowire-based waveguide, it is found that the envelope of mode field intensity closely matches with rectangular waveguide and the guiding properties closely matches with slot waveguide. The type of mode is analyzed by full vectorial Finite Element Method (FEM) and the analytical expression is derived using Effective Index Method (EIM). Analytical expressions are used to express Quasi-TE mode in term of material profile and waveguide physical parameters. The results obtained for SNORW in S, C and L wavelength bands are compared with the earlier reported work on slot waveguide, and the field intensity obtained with the theoretical equations is also compared with that of FEM results.


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