scholarly journals Analytical Prediction for Quasi-TE mode in Silicon Nanowire Optical Rectangular Waveguide

2021 ◽  
Author(s):  
RITU RAJ SINGH ◽  
Vishnu Priye
Keyword(s):  
Integrated Circuits ◽  
Field Intensity ◽  
Rectangular Waveguide ◽  
Silicon Nanowire ◽  
Physical Parameters ◽  
Slot Waveguide ◽  
Analytical Prediction ◽  
Index Method ◽  
Propagation Behavior ◽  
Te Mode

Abstract Theoretical and numerical mode estimation performed on Silicon Nanowire Optical Rectangular Waveguide (SNORW) is presented for on-chip communication in photonic integrated circuits. The propagation behavior of electric and magnetic fields is investigated, where zeroth order mode is found dominating inside the nanoslot region of SNORW for the circularly symmetric quasi-TE mode to propagate. This SNORW structure supports hybrid mode, which derives its behavioral root from the rectangular waveguide and functional root from the slot waveguide. In periodic silicon nanowire-based waveguide, it is found that the envelope of mode field intensity closely matches with rectangular waveguide and the guiding properties closely matches with slot waveguide. The type of mode is analyzed by full vectorial Finite Element Method (FEM) and the analytical expression is derived using Effective Index Method (EIM). Analytical expressions are used to express Quasi-TE mode in term of material profile and waveguide physical parameters. The results obtained for SNORW in S, C and L wavelength bands are compared with the earlier reported work on slot waveguide, and the field intensity obtained with the theoretical equations is also compared with that of FEM results.

scholarly journals Hourly Observed Internal Waves by Geostationary Ocean Color Imagery in the East/Japan Sea

2018 ◽  
Vol 35 (3) ◽  
pp. 609-617 ◽  
Author(s):  
Hyuna Kim ◽  
Young Baek Son ◽  
Young-Heon Jo
Keyword(s):  
Internal Waves ◽  
Ocean Color ◽  
Phase Speed ◽  
Japan Sea ◽  
Tidal Energy ◽  
Physical Parameters ◽  
Propagation Behavior ◽  
Wave Heights ◽  
Bottom Shelf ◽  
Ocean Color Imagery

AbstractAs internal waves (IWs) are generated via internal tidal energy near the bottom shelf break of the Korea Strait, continuous evolutions of IWs are extremely difficult to observe using satellite observations. However, the Geostationary Ocean Color Imager (GOCI) has enabled the detection of IWs in the East/Japan Sea (EJS) on an hourly basis to investigate their propagation behavior. For an extended IW analysis, a total of seven packets were identified using GOCI chlorophyll-a concentration (Chl-a) measurements around the Ulleung Basin and Dok Island in the EJS. The results demonstrate that the IW locations had lower Chl-a values than non-IW-affected regions on 10, 11, 13, and 14 August 2013. The lower Chl-a values are due to the significant wave heights of the IWs, which cause surface water masses to be dispersed. In addition, from the continuous trajectories of the waves in the hourly GOCI Chl-a imagery, quantitative physical parameters of the IWs, such as their pathway (northeasterly), phase speed (1.46–1.61 m s−1), amplitude (20.62–26.76 m), and period (12.29 h), could be obtained. Therefore, the advantage of using GOCI is the ability to detect and analyze the physical characteristics of IWs on an hourly time scale.

scholarly journals Quantitative Analysis of Photon Density of States for One-Dimensional Photonic Crystals in a Rectangular Waveguide

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 576 ◽  
Author(s):  
Ruei-Fu Jao ◽  
Ming-Chieh Lin
Keyword(s):  
Quantitative Analysis ◽  
Photonic Crystals ◽  
Density Of States ◽  
Rectangular Waveguide ◽  
Light Propagation ◽  
Cutoff Frequency ◽  
Photon Density ◽  
One Dimensional ◽  
Te Mode ◽  
General Importance

Light propagation in one-dimensional (1D) photonic crystals (PCs) enclosed in a rectangular waveguide is investigated in order to achieve a complete photonic band gap (PBG) while avoiding the difficulty in fabricating 3D PCs. This work complements our two previous articles (Phys. Rev. E) that quantitatively analyzed omnidirectional light propagation in 1D and 2D PCs, respectively, both showing that a complete PBG cannot exist if an evanescent wave propagation is involved. Here, we present a quantitative analysis of the transmission functions, the band structures, and the photon density of states (PDOS) for both the transverse electric (TE) and transverse magnetic (TM) polarization modes of the periodic multilayer heterostructure confined in a rectangular waveguide. The PDOS of the quasi-1D photonic crystal for both the TE and TM modes are obtained, respectively. It is demonstrated that a “complete PBG” can be obtained for some frequency ranges and categorized into three types: (1) below the cutoff frequency of the fundamental TE mode, (2) within the PBG of the fundamental TE mode but below the cutoff frequency of the next higher order mode, and (3) within an overlap of the PBGs of either TE modes, TM modes, or both. These results are of general importance and relevance to the dipole radiation or spontaneous emission by an atom in quasi-1D periodic structures and may have applications in future photonic quantum technologies.

scholarly journals INVESTIGATION OF INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE I–V CHARACTERISTICS OF THE BIPOLAR n–p–n-TRANSISTOR

2018 ◽  
Vol 63 (2) ◽  
pp. 244-249
Author(s):  
V. B. Odzhaev ◽  
A. K. Panfilenko ◽  
A. N. Pyatlitski ◽  
V. S. Prosolovich ◽  
S. V. Shvedau ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Reverse Current ◽  
Substrate Material ◽  
Physical Characteristics ◽  
Similar Process ◽  
Physical Parameters ◽  
Operational Parameters ◽  
High Concentration ◽  
Collector Junction ◽  
Basic Characteristics

Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n–p–n-transistors. Revelation of the causes of the labile reproducibility of the basic characteristics of the bipolar planar n–p–n-transistors is vital for the purpose of establishing the factors, determining reliability and stability of the operational parameters of the integrated circuits. There were investigated I–V characteristics of the various lots of the bipolar n–p–n-transistors, fabricated under the epitaxialplanar technology as per the similar process charts with the identical used technological materials, however, at different times. It is established that the electro-physical characteristics of the bipolar n–p–n-transistors substantially depend on the contents of the technological impurities in the substrate material. Availability of the high concentration of the generation-recombination centers, related to the metallic impurities, results both in increase of the reverse current of the collector – base junction of the transistors and the significant reduction of the breakdown voltage of the collector junction. The most probable cause of deterioration of the electro-physical parameters of the bipolar n–p–n-transistors is the material contamination with the technological impurities (such, as Fe, Cl, Ca, Cu, Zn and others) during the production process of the devices fabrication. The sources of impurity may be both the components and sub-assemblies of the technological units and the materials and reagents under usage.

scholarly journals Polarization-Insensitive Waveguide Schottky Photodetectors Based on Mode Hybridization Effects in Asymmetric Plasmonic Waveguides

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6885
Author(s):  
Qian Li ◽  
Junjie Tu ◽  
Yang Tian ◽  
Yanli Zhao
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Large Scale ◽  
Layer Structure ◽  
Single Layer ◽  
Absorption Enhancement ◽  
Plasmonic Waveguides ◽  
Wavelength Band ◽  
Te Mode ◽  
Polarization Insensitive

Two types of configurations are theoretically proposed to achieve high responsivity polarization-insensitive waveguide Schottky photodetectors, i.e., a dual-layer structure for 1.55 µm and a single-layer structure for 2 µm wavelength band. Mode hybridization effects between quasi-TM modes and sab1 modes in plasmonic waveguides are first presented and further investigated under diverse metal types with different thicknesses in this work. By utilizing the mode hybridization effects between quasi-TE mode and aab0 mode, and also quasi-TM and sab1 mode in our proposed hybrid plasmonic waveguide, light absorption enhancement can be achieved under both TE and TM incidence within ultrathin and short metal stripes, thus resulting in a considerable responsivity for Si-based sub-bandgap photodetection. For 1.55 µm wavelength, the Au-6 nm-thick device can achieve absorptance of 99.6%/87.6% and responsivity of 138 mA·W−1/121.2 mA·W−1 under TE/TM incidence. Meanwhile, the Au-5 nm-thick device can achieve absorptance of 98.4%/90.2% and responsivity of 89 mA·W−1/81.7 mA·W−1 under TE/TM incidence in 2 µm wavelength band. The ultra-compact polarization-insensitive waveguide Schottky photodetectors may have promising applications in large scale all-Si photonic integrated circuits for high-speed optical communication.

Optical Investigations of Temperature Effects in 14/16 nm FinFETs

2017 ◽  
Author(s):  
Ivo Vogt ◽  
Christian Boit ◽  
Tomonori Nakamura ◽  
Babak Motamedi
Keyword(s):  
Integrated Circuits ◽  
Temperature Effects ◽  
Photon Emission ◽  
Physical Parameters ◽  
Substrate Heating ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Emission Microscopy ◽  
Ingaas Detector

Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Investigation of Photonic Integrated Circuits with Low-Loss Bragg Gratings

2020 ◽  
Vol 41 (3) ◽  
pp. 229-233
Author(s):  
Manjinder Kaur ◽  
Sanjeev Dewra
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Optical Power ◽  
Grating Period ◽  
Bragg Reflector ◽  
Physical Parameters ◽  
Low Loss ◽  
Distributed Bragg Reflector ◽  
The Impact ◽  
Plasmon Polaritons

AbstractThe impact of physical parameters of uniform fiber Bragg grating (U-FBG) like grating period, length of grating, and width of grating on the performance of U-FBG fiber by using finite differences time domain (FDTD) based on surface plasmon polaritons (SPP) is evaluated. An FBG is similar to a distributed Bragg reflector created in a small segment of optical fiber that reflects some particular wavelengths of light and transmits the other wavelengths. It is observed that the maximum received optical power at the reflected port achieved is −1.67×10-6 w/m2 with silver (Ag) profile material of U-FBG at 0.1 w/m2 input transmission power and wavelength of 1.55 μm with 0.9 μm grating length and 0.2 μm grating width. The result shows that the received optical power is changing by optimizing the physical parameters of U-FBG.

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