All-optical high speed NOR gate based on two photon absorption in silicon wire waveguides

Author(s):  
T.K. Liang ◽  
L.R. Nunes ◽  
M. Tsuchiya ◽  
K.S. Abedin ◽  
T. Miyazaki ◽  
...  
2005 ◽  
Author(s):  
P. J. Maguire ◽  
L. P. Barry ◽  
T. Krug ◽  
M. Lynch ◽  
A. L. Bradley ◽  
...  

1999 ◽  
Vol 35 (17) ◽  
pp. 1483 ◽  
Author(s):  
B.C. Thomsen ◽  
L.P. Barry ◽  
J.M. Dudley ◽  
J.D. Harvey

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.


2018 ◽  
Vol 123 (1) ◽  
pp. 725-734 ◽  
Author(s):  
Beata Derkowska-Zielinska ◽  
Katarzyna Matczyszyn ◽  
Marta Dudek ◽  
Marek Samoc ◽  
Robert Czaplicki ◽  
...  

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