scholarly journals Lumped-Parameter Equivalent Circuit Modeling of CMUT Array Elements

2021 ◽  
pp. 1-1
Author(s):  
Tony Merrien ◽  
Audren Boulme ◽  
Dominique Certon
Keyword(s):  
Equivalent Circuit ◽  
Circuit Modeling ◽  
Lumped Parameter ◽  
Equivalent Circuit Modeling

Lumped-parameter equivalent circuit modeling of solar cells with S-shaped I-V characteristics

2019 ◽  
Vol 156 ◽  
pp. 79-86 ◽  
Author(s):  
Fei Yu ◽  
Gongyi Huang ◽  
Wei Lin ◽  
Chuanzhong Xu ◽  
Wanling Deng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Equivalent Circuit ◽  
Circuit Modeling ◽  
Lumped Parameter ◽  
Equivalent Circuit Modeling

scholarly journals A Lumped-Parameter Equivalent Circuit Modeling for S-Shaped I–V Kinks of Organic Solar Cells

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 80 ◽  
Author(s):  
Tiankuo Wei ◽  
Chuanzhong Xu ◽  
Wei Lin ◽  
Gongyi Huang ◽  
Fei Yu
Keyword(s):  
Solar Cells ◽  
Equivalent Circuit ◽  
Organic Solar Cells ◽  
Equivalent Circuit Model ◽  
Circuit Modeling ◽  
Method Of Least Squares ◽  
Lumped Parameter ◽  
Equivalent Circuit Modeling ◽  
Improved Model ◽  
Raphson Method

We propose an improved lumped-parameter equivalent circuit model to describe S-shaped I–V kinks observed from organic solar cells. Firstly, to predict the S-shaped I–V kinks accurately in both the first and fourth quadrants, a shunt resistor in parallel with extraction diode is added to our previous model. Secondly, based on the Newton–Raphson method, we derive a solution to our improved circuit. Thirdly, our solution is verified by the method of least squares and experiments. Finally, compared with our previous work, the improved circuit has higher accuracy in demonstrating S-shaped I–V kinks in the first and fourth quadrants. Such an improved model is suitable for circuit simulations of organic solar cells.

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

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