EMI improvements using the switching frequency modulation in a resonant inverter for domestic induction heating appliances

Author(s):  
J. Acero ◽  
J.M. Burdio ◽  
L.A. Barragan ◽  
D. Navarro ◽  
S. Llorente
Author(s):  
Avijit Chakraborty ◽  
Pradip Kumar Sadhu ◽  
Kallol Bhaumik ◽  
Palash Pal ◽  
Nitai Pal

<p>This paper investigates the behavior of a high frequency parallel quasiresonant<br />inverter fitted domestic induction heater with different switching frequencies. The power semiconductor switch Insulated Gate Bipolar Junction Transistor (IGBT) is incorporated in this high frequency inverter that can operate under ZVS and ZCS conditions during the switching operations at certain switching frequency to reduce switching losses. The proposed induction heating system responds to three different switching frequencies with providing different results. An Insulated Gate Bipolar Junction Transistor (IGBT) provides better efficiency and faster switching operations. After the complete study of the proposed induction heating system at the selected switching frequencies, the results are compared and it is decided that most reliable, efficient and effective operations from the proposed induction heater can be obtained if the switching frequency is selected slightly above the resonant frequency of the tank circuit of the resonant inverter. The proposed scheme is analyzed using Power System<br />Simulator (PSIM) environment.</p>


Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4545
Author(s):  
Yongseung Oh ◽  
Jaeeul Yeon ◽  
Jayoon Kang ◽  
Ilya Galkin ◽  
Wonsoek Oh ◽  
...  

Single-ended (SE) resonant inverters are widely used as power converters for high-pressure rice cooker induction, with 1200 V insulated-gate bipolar transistors (IGBTs) being used as switching devices for kW-class products. When voltage fluctuations occur at the input stage of an SE resonant inverter, the resonant voltage applied to the IGBT can be directly affected, potentially exceeding the breakdown voltage of the IGBT, resulting in its failure. Consequently, the resonant voltage should be limited to below a safety threshold—hardware resonant voltage limiting methods are generally used to do so. This paper proposes a sensorless resonant voltage control method that limits the increase in the resonant voltage caused by overvoltage or supply voltage fluctuations. By calculating and predicting the resonance voltage through the analysis of the resonance circuit, the resonance voltage is controlled not to exceed the breakdown voltage of the IGBT. The experimental results of a 1.35 kW SE resonant inverter for a high-pressure induction heating rice cooker were used to verify the validity of the proposed sensorless resonant voltage limiting method.


2011 ◽  
Vol 58 (7) ◽  
pp. 2915-2925 ◽  
Author(s):  
Saichol Chudjuarjeen ◽  
Anawach Sangswang ◽  
Chayant Koompai

Author(s):  
B. Weiss ◽  
R. Reiner ◽  
R. Quay ◽  
P. Waltereit ◽  
F. Benkhelifa ◽  
...  

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