Observation of mechanisms of screen printed contact formation during heat treatment on multicrystalline silicon solar cells by transmission electron microscopy

Author(s):  
B. Thuillier ◽  
S. Berger ◽  
J.P. Boyeaux ◽  
A. Laugier
2017 ◽  
Vol 23 (5) ◽  
pp. 900-904 ◽  
Author(s):  
Haider Ali ◽  
Xinbo Yang ◽  
Klaus Weber ◽  
Winston V. Schoenfeld ◽  
Kristopher O. Davis

AbstractIn this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2−x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.


1987 ◽  
Vol 96 ◽  
Author(s):  
M. H. Ghandehari ◽  
J. Fidler

ABSTRACTMicrostructures of Nd15−xDyxFe77B8 prepared by alloying with Dy, and by using Dy2O3 as a sinl'ken adidive, have been determined using electron microprobe and transmission electron microscopy. The results have shown a higher Dy concentration near the grain boundaries of the 2–14–1 phase for magnets doped with Dy2O 3, as compared to the Dy-alloyed magnets. A two-step post sintering heat treatment was also studied for the two systems. The resultant concentration gradient of Dy in the 2–14–1 phase of the oxide-doped magnets is explained by the reaction of Dy2O3 with the Nd-rich grain boundary phase and its slow diffusion into thg 4–14–1 phase. Increased Dy concentration near the grain boundary is more effective in improving the coercivity, as domain reversal nucleation originates at or near this region.


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