Deposition temperature effect on a-Si:H produced by DC magnetron sputtering

Author(s):  
R. J. Santana ◽  
T. D. O. Moura ◽  
G. R. Guimaraes ◽  
D. O. Miranda ◽  
R. T. Proenca ◽  
...  
2009 ◽  
Vol 206 (7) ◽  
pp. 1504-1509 ◽  
Author(s):  
R. Cherfi ◽  
A. Abdelmoumene ◽  
M. Kechouane ◽  
A. Rahal ◽  
M. Aoucher ◽  
...  

2013 ◽  
Vol 787 ◽  
pp. 14-18
Author(s):  
Xiao Bai Chen ◽  
Hong Qiu

About 300nm-thick Ni80Fe20 films were deposited on SiO2/Si (100) substrates at 300 K and 673 K in 1.2 Pa and 0.8 Pa Ar gas by a direct current (DC) magnetron sputtering system with the oblique target. The films grown at 300 K have a predominate [11 crystal orientation in the growth direction whereas those deposited at 673 K grow mainly with a [11 crystalline orientation in the growth direction. All the films have a columnar structure. The grain size increases with increasing deposition temperature. The films grown at 673 K are dense compared with those grown at 300 K. The film deposited at 673 K in 0.8 Pa Ar has the lowest resistivity.


1996 ◽  
Vol 9 (5) ◽  
pp. 519-522
Author(s):  
Z. S. Peng ◽  
C. R. Wan ◽  
C. Y. Jiang ◽  
Z. Q. Hua ◽  
B. C. Yang ◽  
...  

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG

2017 ◽  
Vol 9 (5) ◽  
pp. 05035-1-05035-6 ◽  
Author(s):  
G. I. Kopach ◽  
◽  
R. P. Mygushchenko ◽  
G. S. Khrypunov ◽  
A. I. Dobrozhan ◽  
...  

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