Structure of Ni80Fe20 Films Deposited on SiO2/Si(100) by Direct Current Magnetron Sputtering System with the Oblique Target

2013 ◽  
Vol 787 ◽  
pp. 14-18
Author(s):  
Xiao Bai Chen ◽  
Hong Qiu
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Growth Direction ◽  
Columnar Structure ◽  
Dc Magnetron Sputtering ◽  
Direct Current Magnetron Sputtering ◽  
Ar Gas ◽  
Sputtering System

About 300nm-thick Ni80Fe20 films were deposited on SiO2/Si (100) substrates at 300 K and 673 K in 1.2 Pa and 0.8 Pa Ar gas by a direct current (DC) magnetron sputtering system with the oblique target. The films grown at 300 K have a predominate [11 crystal orientation in the growth direction whereas those deposited at 673 K grow mainly with a [11 crystalline orientation in the growth direction. All the films have a columnar structure. The grain size increases with increasing deposition temperature. The films grown at 673 K are dense compared with those grown at 300 K. The film deposited at 673 K in 0.8 Pa Ar has the lowest resistivity.

scholarly journals Microstructure and Properties of CrAlSiN Coatings Deposited by HiPIMS and Direct-Current Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 512 ◽  
Author(s):  
Qixiang Fan ◽  
Yangmengtian Liang ◽  
Zhenghuan Wu ◽  
Yanmei Liu ◽  
Tiegang Wang
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Adhesive Strength ◽  
Columnar Structure ◽  
Chemical Compositions ◽  
Face Centered Cubic ◽  
Al Content ◽  
Sputtering Power ◽  
Direct Current Magnetron Sputtering ◽  
Face Centered

Four CrAlSiN coatings with different Al contents were prepared by varying Al sputtering power using a combined method of high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS). Microstructure, chemical compositions and mechanical properties of the four coatings were characterized by XRD, XPS, SEM, TEM, nano-indentation etc. Results showed that the four coatings possessed face-centered cubic (fcc) CrN phase with Al and part of Si dissolved in it. Another part of Si existed as amorphous phase in the coatings. All the four coatings had columnar structure and formed in epitaxy growth by template effect. With increasing Al sputtering power, the Al content increased from 11.4 to 17.6 at.% gradually, while the Cr content decreased a little. The hardness of the CrAlSiN coatings increased initially probably due to the refinement of the coating grain size, while it decreased afterwards mainly caused by the aggregation of small particles leading to rougher surface and defects formed in the coatings. The elastic modulus and adhesive strength possessed the same variation tendency as the hardness versus Al sputtering power. The CrAlSiN coating with Al sputtering power of about 0.8 kW had the highest hardness of about 26.7 GPa and adhesive strength of about 27.2 N.

A New Solar Selective Absorbing Structure of Al-Al2O3 Cermet Composite Films by Pulsed Direct Current Magnetron Sputtering

2008 ◽  
Vol 53-54 ◽  
pp. 349-353 ◽  
Author(s):  
Li Wei Zhu ◽  
Yu Dong Feng ◽  
Y. Wang ◽  
Z.M. Wang ◽  
K. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Composite Films ◽  
Metal Distribution ◽  
Dc Magnetron Sputtering ◽  
Thermal Emittance ◽  
Direct Current Magnetron Sputtering ◽  
Pulsed Direct Current

Thin films composed of mixtures of metals and dielectric are being considered for use as solar selective coatings for a various applications. By controlling the metal distribution, the solar selective coatings can be designed to have the combined properties of high absorptance, and low infrared emittance. We have studied the preparation of the Al-Al2O3 cermet composite films deposited on the flexible Kapton substrate by pulsed direct current (DC) magnetron sputtering technique. The complex films include infrared reflective layers, interference absorptive layers, and anti-reflective layers. The measurements of the samples show that the spectral absorptance in the region of 0.2~2.5μm and thermal emittance in the region of 2.5~25μm were 92% and 7%, respectively.

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