Island-cap interface misfit modulated carrier mechanisms in p-i-n epitaxial quantum dot photovoltaic devices

Author(s):  
Jateen S. Gandhi ◽  
Choong-Un Kim ◽  
Wiley P. Kirk
MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 759-766 ◽  
Author(s):  
Kimberly Sablon ◽  
Andrei Sergeev ◽  
Xiang Zhang ◽  
Vladimir Mitin ◽  
Michael Yakimov ◽  
...  

ABSTRACTNovel approach to optimize quantum dot (QD) materials for specific optoelectronic applications is based on engineering of nanoscale potential profile, which is created by charged QDs. The nanoscale barriers prevent capture of photocarriers and drastically increase the photoelectron lifetime, which in turn strongly improves the photoconductive gain, responsivity, and sensitivity of photodetectors and decreases the nonradiative recombination losses of photovoltaic devices. QD charging may be created by various types of selective doping. To investigate effects of selective doping, we model, fabricated, and characterized AlGaAs/InAs QD structures with n-doping of QD layers, doping of interdot layers, and bipolar doping, which combines p-doping of QD layers with strong n-doping of the interdot space. We have measured spectral characteristics of photoresponse, photocurrent and dark current. The experimental data show that providing the same electron population of QDs, the bipolar doping creates the most contrasting nanoscale profile with the highest barriers around dots.


ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7362-7370 ◽  
Author(s):  
Xin Tang ◽  
Matthew M. Ackerman ◽  
Philippe Guyot-Sionnest

2010 ◽  
Vol 20 (20) ◽  
pp. 3555-3560 ◽  
Author(s):  
Chih-Yin Kuo ◽  
Ming-Shin Su ◽  
Yu-Chien Hsu ◽  
Hui-Ni Lin ◽  
Kung-Hwa Wei

Author(s):  
F. Michelini ◽  
A. Crepieux ◽  
F. Gibelli ◽  
J.-F Guillemoles ◽  
N. Cavassilas ◽  
...  

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940083
Author(s):  
A. Yu. Saunina ◽  
V. R. Nikitenko ◽  
A. A. Chistyakov ◽  
M. A. Zvaizgne ◽  
A. R. Tameev ◽  
...  

An analytic model of [Formula: see text]–[Formula: see text] characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.


ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 8771-8779 ◽  
Author(s):  
Artem A. Bakulin ◽  
Stefanie Neutzner ◽  
Huib J. Bakker ◽  
Laurent Ottaviani ◽  
Damien Barakel ◽  
...  

2012 ◽  
Vol 1 (1) ◽  
pp. 22-39 ◽  
Author(s):  
Belete Atomsa Gonfa ◽  
My El Ali Khakani ◽  
Dongling Ma

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