ABSTRACTThis paper analyzes the charge transport in “tunnel junctions” of amorphous Si Material based multijunction solar cells and proposes some guidelines for making good “tunnel junctions” based on the analysis. The Mechanism of the current flow in these “tunnel” junctions is recombination. However, the recombination mechanism is not the usual localized recombination but is non-localized recombination. The energy analysis shows that the usual localized recombination will cause a large energy loss and result in much lower energy conversion efficiency and Voc than the experimentally measured values. In non-local recombination, opposite charge carriers located at different locations can recombine by tunneling into a defect state. Based on this Mechanism, a good “tunnel junction” should be thin, with a large defect state density in the middle region of the “tunnel junction”. Broad tail states material and a thin layer small band gap material in tunnel junctions may improve the non-local recombination by providing more intermediate states for charge to tunnel through.
Admittance spectroscopy analysis of dye-sensitised solar cells with host-guest complexes
