The defects at perovskite film surface could be passivated effectively using a derivative of polyhedral oligomeric silsesquioxane with an amino-group (NH2-POSS). The extremely low trap-state energy level (0.045 eV) was obtained by temperature-dependent admittance measurements. Both stability and efficiency in devices have been approved.
Based on control of the perovskite film thickness, we investigate temperature-dependent charge carrier transport, recombination, traps, and solar cell behavior based on methylammonium lead triiodide films.