Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.

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Experimental determination of series resistance of p-n junction diodes and solar cells

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1978.19089 ◽

1978 ◽

Vol 25 (3) ◽

pp. 386-388 ◽

Cited By ~ 14

Author(s):

P.J. Chen ◽

S.C. Pao ◽

A. Neugroschel ◽

F.A. Lindholm

Keyword(s):

Solar Cells ◽

Experimental Determination ◽

Series Resistance

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Determination of the origin of the series resistance through electroluminescence measurements of GaAs and AlxGa1−xAs solar cells and LEDs

Solid-State Electronics ◽

10.1016/s0038-1101(97)00274-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 567-571 ◽

Cited By ~ 6

Author(s):

Rosa F. Reyna ◽

Antonio Martı́ ◽

Juan C. Maroto

Keyword(s):

Solar Cells ◽

Series Resistance

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Highly Arsenic Doped CdTe Layers for the Back Contacts of CdTe Solar Cells

MRS Proceedings ◽

10.1557/proc-1012-y12-08 ◽

2007 ◽

Vol 1012 ◽

Cited By ~ 18

Author(s):

Vincent Barrioz ◽

Yuri Y. Proskuryakov ◽

Eurig W. Jones ◽

Jon D. Major ◽

Stuart J.C. Irvine ◽

...

Keyword(s):

Solar Cells ◽

Series Resistance ◽

Chemical Vapour ◽

Cdte Layer ◽

Open Circuit ◽

Organic Chemical ◽

Back Contact ◽

Cdte Solar Cells ◽

Current Voltage ◽

Metal Organic

AbstractIn an effort to overcome the lack of a suitable metal as an ohmic back contact for CdTe solar cells, a study was carried out on the potential for using a highly arsenic (As) doped CdTe layer with metallization. The deposition of full CdTe/CdS devices, including the highly doped CdTe:As and the CdCl2 treatment, were carried out by metal organic chemical vapour deposition (MOCVD), in an all-in-one process with no etching being necessary. They were characterized and compared to control devices prepared using conventional bromine-methanol back contact etching. SIMS and C-V profiling results indicated that arsenic concentrations of up to 1.5 × 1019 at·cm-3 were incorporated in the CdTe. Current-voltage (J-V) characteristics showed strong improvements, particularly in the open-circuit voltage (Voc) and series resistance (Rs): With a 250 nm thick doped layer, the series resistance was reduced from 9.8 Ω·cm2 to 1.6 Ω·cm2 for a contact area of 0.25 cm2; the J-V curves displayed no rollover, while the Voc increased by up to 70 mV (~ 12 % rise). Preliminary XRD data show that there may be an As2Te3 layer at the CdTe surface which could be contributing to the low barrier height of this contact.

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Photoelectric determination of the series resistance of multijunction solar cells

Semiconductors ◽

10.1134/s1063782612080143 ◽

2012 ◽

Vol 46 (8) ◽

pp. 1051-1058 ◽

Cited By ~ 10

Author(s):

M. A. Mintairov ◽

V. V. Evstropov ◽

N. A. Kalyuzhnyi ◽

C. A. Mintairov ◽

N. Kh. Timoshina ◽

...

Keyword(s):

Solar Cells ◽

Series Resistance ◽

Multijunction Solar Cells

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Nanoparticle-Based Contacts to CdTe

MRS Proceedings ◽

10.1557/proc-536-407 ◽

1998 ◽

Vol 536 ◽

Author(s):

D. L. Schulz ◽

R. Ribelin ◽

C. J. Curtis ◽

D. E. King ◽

D. S. Ginley

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Valence State ◽

Series Resistance ◽

Open Circuit ◽

Standard Methods ◽

Cdte Solar Cell ◽

Cdte Solar Cells ◽

Device Properties ◽

Open Circuit Voltages

AbstractOur team has been investigating the use of particle-based contacts in CdTe solar cell technologies. Toward this end, particles of Cu-doped HgTe (Hg-Cu-Te) and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures. These metal telluride materials were characterized by standard methods. Hg-Cu-Te particles in graphite electrodag contacts produced CdTe solar cells with efficiencies above 12% and series resistance (Rse) of 6 Ω or less. Metathesis preparation of Cu(I) and Cu(II) tellurides (i.e., Cu2Te and CuTe, respectively) were attempted as a means of characterizing the valence state of Cu in the Hg-Cu-Te ink. For Sb-Te contacts to CdTe, open circuit voltages (Vocs) in excess of 800 mV were observed, however, efficiencies were limited to 9%; perhaps a consequence of the marked increase in the Rse (i.e., >20 Ω) in these non-graphite containing contacts. Acetylene black was mixed into the methanolic Sb-Te colloid as a means of reducing Rse, however, no improvement in device properties was observed.

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Determination of Current Transport Efficiency Map by Optoelectronic Reciprocity Relation in CdTe Solar Cells

IEEE Journal of Photovoltaics ◽

10.1109/jphotov.2018.2869545 ◽

2018 ◽

Vol 8 (6) ◽

pp. 1767-1772 ◽

Cited By ~ 3

Author(s):

Aobo Ren ◽

Hao Xu ◽

Amaury Delamarre ◽

Cai Liu ◽

Lili Wu ◽

...

Keyword(s):

Solar Cells ◽

Reciprocity Relation ◽

Current Transport ◽

Transport Efficiency ◽

Cdte Solar Cells ◽

Efficiency Map

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Influences of Low Intensity on Diode Parameters of CdTe Solar Cells

Materials ◽

10.3390/ma13092194 ◽

2020 ◽

Vol 13 (9) ◽

pp. 2194

Author(s):

Xiaobo Xu ◽

Wenping Gu ◽

Xiaoyan Wang ◽

Wei Zhu ◽

Lin Zhang ◽

...

Keyword(s):

Solar Cells ◽

Series Resistance ◽

Short Circuit ◽

Illumination Intensity ◽

Saturation Current ◽

Shunt Resistance ◽

Cdte Solar Cells ◽

Parameter Variations ◽

Small Intensity ◽

Saturation Current Density

This study deals with the CdS/CdTe solar cells under low illumination intensity, with cell #1 for the shunt resistance exceeding 100,000 Ω·cm2 and cell #2 for the shunt resistance above 1000 Ω·cm2. The diode parameter variations with the decline of the irradiance intensity are illustrated by dividing 0–100 mW/cm−2 into a number of small intensity ranges for J–V measurements and assuming the diode parameters to be constant within each range, the diode parameters of each range including the series resistance, the shunt resistance, the reverse saturation current density and the ideality factor are then extracted by employing an analytical approach. The mechanism of the cell performance deviations are also investigated by basic theories, reports and experiments. For cell #1 with higher Rsh corresponding to less traps, Rsh shows a upward tendency as the irradiance declines, n and J0 exhibit a rise with the irradiance and keep nearly unchanged at the low irradiance values mainly due to recombination and carrier contributions, Rs shows a slight increase when the irradiance intensity goes down because of the resistance of CdTe absorption layer. For cell #2 with lower Rsh corresponding to more traps, with the decrease of the illumination intensity, Rsh increases sharply only for captured carrier reduction, Rs goes steadily up similarly, n and J0 exhibit a decline with the irradiance due to recombination shift. It should be pointed out that Rs varies much smoother than the traditional approximation of a reciprocal of differential at short circuit, and the distribution of Rsh is diverse, and an average Rsh of for each intensity range can reflect the variation trend.

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