Nanoparticle-Based Contacts to CdTe

1998 ◽  
Vol 536 ◽  
Author(s):  
D. L. Schulz ◽  
R. Ribelin ◽  
C. J. Curtis ◽  
D. E. King ◽  
D. S. Ginley
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Valence State ◽  
Series Resistance ◽  
Open Circuit ◽  
Standard Methods ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

AbstractOur team has been investigating the use of particle-based contacts in CdTe solar cell technologies. Toward this end, particles of Cu-doped HgTe (Hg-Cu-Te) and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures. These metal telluride materials were characterized by standard methods. Hg-Cu-Te particles in graphite electrodag contacts produced CdTe solar cells with efficiencies above 12% and series resistance (Rse) of 6 Ω or less. Metathesis preparation of Cu(I) and Cu(II) tellurides (i.e., Cu2Te and CuTe, respectively) were attempted as a means of characterizing the valence state of Cu in the Hg-Cu-Te ink. For Sb-Te contacts to CdTe, open circuit voltages (Vocs) in excess of 800 mV were observed, however, efficiencies were limited to 9%; perhaps a consequence of the marked increase in the Rse (i.e., >20 Ω) in these non-graphite containing contacts. Acetylene black was mixed into the methanolic Sb-Te colloid as a means of reducing Rse, however, no improvement in device properties was observed.

Ultrathin CdTe solar cells with absorber layer thinner than 0.2 microns

2018 ◽  
Vol 83 (2) ◽  
pp. 20101 ◽  
Author(s):  
Min Wang ◽  
Xun Li ◽  
Deliang Wang
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Absorber Layer ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Different Temperatures ◽  
Total Leakage

In this study, ultrathin Cadmium telluride (CdTe) solar cells with absorber thickness from 50 to 200 nm were fabricated. The short-circuit current (JSC) and open-circuit voltage (VOC) were found to decrease significantly with the thickness of absorber layer decreasing. The decrease of the JSC was mainly because of the insufficient light absorption. Even so, the JSC was still found to be 8.2 mA/cm2, which was about 32% of that of a normal CdTe solar cell when the thickness of absorber layer was reduced to ∼1% of that of a normal CdS/CdTe solar cell, i.e. 50 nm. The reasons, which caused the decrease of VOC, were also discussed in this study. The dark current–voltage characteristics were analyzed and the contribution of ohmic shunting current to the total leakage current was found to increase with the thickness of CdTe absorber layer decreasing. The device characteristics of the ultrathin CdTe solar cells under weak light irradiance and at different temperatures were also investigated. This study provides a guideline for the fabrication of ultrathin CdTe solar cells in the future.

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

Highly Arsenic Doped CdTe Layers for the Back Contacts of CdTe Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
Vincent Barrioz ◽  
Yuri Y. Proskuryakov ◽  
Eurig W. Jones ◽  
Jon D. Major ◽  
Stuart J.C. Irvine ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Chemical Vapour ◽  
Cdte Layer ◽  
Open Circuit ◽  
Organic Chemical ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Current Voltage ◽  
Metal Organic

AbstractIn an effort to overcome the lack of a suitable metal as an ohmic back contact for CdTe solar cells, a study was carried out on the potential for using a highly arsenic (As) doped CdTe layer with metallization. The deposition of full CdTe/CdS devices, including the highly doped CdTe:As and the CdCl2 treatment, were carried out by metal organic chemical vapour deposition (MOCVD), in an all-in-one process with no etching being necessary. They were characterized and compared to control devices prepared using conventional bromine-methanol back contact etching. SIMS and C-V profiling results indicated that arsenic concentrations of up to 1.5 × 1019 at·cm-3 were incorporated in the CdTe. Current-voltage (J-V) characteristics showed strong improvements, particularly in the open-circuit voltage (Voc) and series resistance (Rs): With a 250 nm thick doped layer, the series resistance was reduced from 9.8 Ω·cm2 to 1.6 Ω·cm2 for a contact area of 0.25 cm2; the J-V curves displayed no rollover, while the Voc increased by up to 70 mV (~ 12 % rise). Preliminary XRD data show that there may be an As2Te3 layer at the CdTe surface which could be contributing to the low barrier height of this contact.

Amorphous Silicon-Carbon Alloys for Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Yuan-Min Li
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
Open Circuit ◽  
Hydrogen Dilution ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Open Circuit Voltages

Recent efforts to optimize undoped, glow-discharge hydrogenated amorphous silicon-carbon alloys (a-SiC:H) with 1.9-2.0 eV bandgaps for solar cell applications are reviewed. Hydrogen dilution coupled with relatively low substrate temperatures (below 200 °C) have led to great improvements in the optical and phototransport properties of a-SiC:H films. The issue of alternative carbon feedstocks other than methane (CH4) will be explored. The improved a-SiC:H alloys have resulted in solar cells with high open circuit voltages (V∞ > 1.0 volt) and high fill factors (> 0.7). Further, the a-SiC:H solar cell instability upon prolonged light exposure has been much reduced. Correlation will be made between the properties of bulk undoped a-SiC:H films and the performance of p-i-nsingle junction solar cells using corresponding a-SiC:H thin i-layers.

Incorporating a vertical BDT unit in conjugated polymers for drastically improving the open-circuit voltage of polymer solar cells

2016 ◽  
Vol 40 (6) ◽  
pp. 5300-5305 ◽  
Author(s):  
Shuguang Wen ◽  
Manjun Xiao ◽  
Wenfei Shen ◽  
Chuantao Gu ◽  
Dangqiang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conjugated Polymers ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Open Circuit ◽  
Open Circuit Voltages

High open circuit voltages (Vocs) of over 1.0 V were obtained for solar cell devices based on vertical BDT-containing conjugated polymers.

Influence of the cyanine counter anions on a bi-layer solar cell performance

2013 ◽  
Vol 1493 ◽  
pp. 275-280
Author(s):  
Olga Malinkiewicz ◽  
Thais Grancha ◽  
Martijn Lenes ◽  
Hicham Brine ◽  
Alejandra Soriano ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Energy Levels ◽  
Open Circuit ◽  
Cyanine Dye ◽  
Optimal Alignment ◽  
Solar Cell Performance ◽  
Counter Ions ◽  
Donor And Acceptor ◽  
Open Circuit Voltages

ABSTRACTWe present normal and inverted solution processed bi-layer solar cells using cationic cyanine dyes as the electron donor and a fullerene as the electron acceptor. The cells exhibit high open circuit voltages up to 1 volt showing the optimal alignment of donor and acceptor energy levels. We demonstrate the large effect that cyanine dye counter ions can have on the energetics of the solar cells and how the S-shaped current density vs. voltage (J-V) curves can be avoided.

Effect of Location of Sodium Precursor on the Morphological and Device Properties of CIGS Solar Cells

2013 ◽  
Vol 1538 ◽  
pp. 51-60 ◽  
Author(s):  
Neelkanth G. Dhere ◽  
Ashwani Kaul ◽  
Helio Moutinho
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Cigs Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

ABSTRACTSodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well.

F-Substituted oligothiophenes serve as nonfullerene acceptors in polymer solar cells with open-circuit voltages >1 V

2018 ◽  
Vol 6 (20) ◽  
pp. 9368-9372 ◽  
Author(s):  
Tainan Duan ◽  
Maxime Babics ◽  
Akmaral Seitkhan ◽  
Yuliar Firdaus ◽  
Ru-Ze Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polymer Solar Cells ◽  
Open Circuit ◽  
Low Bandgap ◽  
Open Circuit Voltages

F-Substituted oligothiophenes were designed and used as nonfullerene acceptors in BHJ solar cells. With low-bandgap polymer donors, the solar cell devices reach PCEs of up to 4.5% and open-circuit voltages >1 V.

Effects of Temperature on I-V Characteristics of InAs/GaAs Quantum-Dot Solar Cells

2015 ◽  
Vol 1103 ◽  
pp. 129-135 ◽  
Author(s):  
Saichon Sriphan ◽  
Suwit Kiravittaya ◽  
Supachok Thainoi ◽  
Somsak Panyakaew
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Series Resistance ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Substantial Improvement ◽  
Open Circuit ◽  
Gaas Quantum Dot

The current-voltage (I-V) characteristics of quantum-dot (QD) solar cells under illumination at various temperatures are presented. Stacked of high-density self-assembled InAs/GaAs QDs were incorporated into the Schottky-barrier-type solar cell structure. The I-V characteristics reveal that both short-circuit current and open-circuit voltage of the QD solar cell reduce when the measurement temperature increases. This result is unexpected and inconsistent with a basic solar cell theory where the temperature is believed to cause the enhancement of the short-circuit current. By considering the solar-cell circuit model, we can explain the obtained I-V curves by a high series resistance of the cell structure. Theoretical exclusion of the series resistance shows a substantial improvement of solar cell fill factor and efficiency. This work therefore suggests that reduction of series resistance by properly doping of the epitaxial layers can improve these devices.

CdS Window Layer for Large Open Circuit Voltages of Low Environmental-Load CdS/CdTe Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
T. Toyama ◽  
H. Oda ◽  
K. Nakamura ◽  
T. Fujihara ◽  
K. Shimizuand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Mixed Crystal ◽  
Open Circuit ◽  
Window Layer ◽  
Environmental Load ◽  
Layer Width ◽  
Cdte Solar Cells ◽  
Substrate Temperatures ◽  
Open Circuit Voltages ◽  
Cds Crystallites

AbstractThe low ‘environmental-load’ CdS/CdTe solar cells for reducing consumption of Cd compounds have been investigated employing the CdS layers fabricated at various substrate temperatures, TCdS, and a conversion efficiency of 14.1% has been achieved. The nanostructure of CdS crystallites made at different TCdS are compared to the crystallinity of CdS, and CdTe deposited on CdS as well as sulfur fraction in CdTe1-xSx mixed crystal layer unintentionally formed at CdS/CdTe(S) interface. The photovoltaic performances, especially obtained relative high open circuit voltages, are discussed in conjunction with the structural properties as well as electrical properties of the solar cells. The solar cells show a relative high Voc due to the large CdTe grains as well as the narrow depletion layer width. Besides, preventing deterioration of the CdS/CdTe(S) interface is found to be quite effective for achieving high open circuit voltages and fill factors.

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