Highly Linear Low Power V-Band Down-Conversion Mixer in SiGe BiCMOS Technology

2020 IEEE Radio and Wireless Symposium (RWS) ◽

10.1109/rws45077.2020.9050103 ◽

2020 ◽

Author(s):

Zahra Marvi ◽

Ehsan Ashoori

Keyword(s):

Low Power ◽

V Band ◽

Bicmos Technology ◽

Sige Bicmos ◽

Down Conversion

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A V-band Low-Power Compact LNA in 130-nm SiGe BiCMOS Technology

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2021.3062983 ◽

2021 ◽

pp. 1-1

Author(s):

Batuhan Sutbas ◽

Herman Jalli Ng ◽

Jan Wessel ◽

Alexander Koelpin ◽

Gerhard Kahmen

Keyword(s):

Low Power ◽

V Band ◽

Bicmos Technology ◽

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Analysis and Design of Low Power Wideband Programmable Frequency Divider in 0.13-μm SiGe BiCMOS Technology

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2021.153879 ◽

2021 ◽

pp. 153879

Author(s):

Guoxiao Cheng ◽

Zhiqun Li ◽

Wen Wu

Keyword(s):

Low Power ◽

Frequency Divider ◽

Analysis And Design ◽

Bicmos Technology ◽

Sige Bicmos ◽

Programmable Frequency Divider

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Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz mmic down-conversion mixer

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005. ◽

10.1109/bipol.2005.1555239 ◽

2005 ◽

Author(s):

Sang-Heung Lee ◽

Ja-Yol Lee ◽

Sang-Hoon Kim ◽

Hyun-Cheol Bae ◽

Seung-Yun Lee ◽

...

Keyword(s):

Bicmos Technology ◽

Sige Bicmos ◽

Down Conversion

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A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits ◽

10.1109/rfic.2005.1489204 ◽

2005 ◽

Author(s):

N. Shiramizu ◽

T. Masuda ◽

M. Tanabe ◽

K. Washio

Keyword(s):

Low Power ◽

Power Amplifier ◽

Low Noise ◽

Bicmos Technology ◽

Full Band ◽

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A low-power, 10Gs/s track-and-hold amplifier in SiGe BiCMOS technology

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. ◽

10.1109/esscir.2005.1541610 ◽

2005 ◽

Author(s):

Y. Borokhovych ◽

H. Gustat ◽

B. Tillack ◽

B. Heinemann ◽

Yuan Lu ◽

...

Keyword(s):

Low Power ◽

Bicmos Technology ◽

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A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040174 ◽

2020 ◽

Author(s):

Sascha Breun ◽

Matthias Voelkel ◽

Albert-Marcel Schrotz ◽

Marco Dietz ◽

Vadim Issakov ◽

...

Keyword(s):

Low Power ◽

Bicmos Technology ◽

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Low-power 60GHz receiver front-end with a variable-gain LNA in SiGe BiCMOS technology

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bipol.2010.5668052 ◽

2010 ◽

Author(s):

Yaoming Sun ◽

Christoph J. Scheytt

Keyword(s):

Low Power ◽

Variable Gain ◽

Front End ◽

Bicmos Technology ◽

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A low power programmable gain high PAE K-/Ka-band stacked amplifier in 0.18 µm SiGe BiCMOS technology

2015 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2015.7166782 ◽

2015 ◽

Author(s):

Thangarasu Bharatha Kumar ◽

Kaixue Ma ◽

Kiat Seng Yeo

Keyword(s):

Low Power ◽

Ka Band ◽

Bicmos Technology ◽

Sige Bicmos ◽

Programmable Gain

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Design of a low noise, low power V-band low noise amplifier in 130 nm SiGe BiCMOS process technology

2017 International Semiconductor Conference (CAS) ◽

10.1109/smicnd.2017.8101223 ◽

2017 ◽

Author(s):

M. Fanoro ◽

S. S. Olokede ◽

S. Sinha

Keyword(s):

Low Power ◽

Low Noise ◽

Low Noise Amplifier ◽

Process Technology ◽

V Band ◽

Sige Bicmos ◽

Bicmos Process ◽

Noise Amplifier

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A 12 GHz IF bandwidth low power 5–17 GHz V-band positive transformer-feedback down-conversion mixer

2014 IEEE MTT-S International Microwave Symposium (IMS2014) ◽

10.1109/mwsym.2014.6848561 ◽

2014 ◽

Author(s):

Suman P. Sah ◽

Deukhyoun Heo

Keyword(s):

Low Power ◽

V Band ◽

Transformer Feedback ◽

Down Conversion

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