Simulation and Modelling of Resonant Tunneling Diode Peak Voltage Dependence on Spacer Layers

2021 ◽  
Author(s):  
Saif Alomari ◽  
Jose Figueiredo
Keyword(s):  
Resonant Tunneling ◽  
Voltage Dependence ◽  
Resonant Tunneling Diode ◽  
Peak Voltage ◽  
Tunneling Diode ◽  
Simulation And Modelling

Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well

2021 ◽  
Author(s):  
Madhusudan Mishra ◽  
N R Das ◽  
Narayan Sahoo ◽  
Trinath Sahu
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Graphene Nanoribbon ◽  
Potential Well ◽  
High Frequency Signal ◽  
Peak Voltage ◽  
Voltage Range ◽  
Tunneling Diode ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Abstract We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I-V characteristics. Results show that an enhancement in the peak current (Ip ) can be obtained by reducing the well width (Ww ) or barrier width (Wb ). As Ww decreases, Ip shifts to a higher peak voltage (Vp ), while there is almost no change in Vp with decreasing Wb . It is gratifying to note that there is an enhancement in Ip by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene, having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized

GaAs/AlAs resonant-tunneling diode for subharmonic mixers

2010 ◽  
Vol 39 (5) ◽  
pp. 331-339 ◽  
Author(s):  
N. V. Alkeev ◽  
S. V. Averin ◽  
A. A. Dorofeev ◽  
N. B. Gladysheva ◽  
M. Yu. Torgashin
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Subharmonic Mixers
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