Methodology to evaluate the performance of metal-oxide surge arresters monitoring techniques based on the resistive leakage current

2018 ◽  
Author(s):  
George R.S. Lira ◽  
Vandilson R.N. Barbosa ◽  
Valdemir S. Brito ◽  
Edson G. Costa ◽  
Cicero R.C. Amorim Filho ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Monitoring Techniques ◽  
Surge Arresters

scholarly journals Circuit-based method for extracting the resistive leakage current of metal oxide surge arrester

2020 ◽  
Vol 9 (6) ◽  
pp. 2213-2221 ◽  
Author(s):  
Amir Hesam Khavari ◽  
Abdullah Munir ◽  
Zulkurnain Abdul- Malek
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Extraction Method ◽  
Maximum Error ◽  
Condition Assessment ◽  
Experimental Results ◽  
Equivalent Model ◽  
Surge Arresters ◽  
Total Leakage ◽  
Resistive Component

Resistive leakage current based condition assessment of metal oxide surge arrester (MOSA) is one of the most extensively employed technique to monitor its degradation. An extraction method is customarily required to extract the resistive component from the total leakage current. The existing methods to extract the resistive current are complex and less accurate. Therefore, this paper describes a simple and accurate circuit-based method to extract the resistive current using equivalent model and measured leakage current of the arrester. The accuracy of the proposed method is validated through experimental results on ABB’s 120 kV surge arrester, EMTP and QuickField software simulations. The performance of the method is also analyzed and verified experimentally on 72, 180 and 240 kV rated ABB’s surge arresters. The obtained results of resistive leakage current have shown the maximum error of 0.001%. Simple and easier computational steps with higher accuracy are the key benefits of the proposed technique.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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