Monte Carlo hardware simulator for electron dynamics in semiconductors

2002 ◽  
Author(s):  
A. Negoi ◽  
J. Zimmermann
Keyword(s):  
Monte Carlo ◽  
Electron Dynamics

Monte Carlo simulations of electron dynamics in N2/CO2 mixtures

2007 ◽  
Vol 45 (2) ◽  
pp. 309-315 ◽  
Author(s):  
M. Janda ◽  
V. Martišovitš ◽  
M. Morvová ◽  
Z. Machala ◽  
K. Hensel
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Electron Dynamics

scholarly journals Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 287-290
Author(s):  
J. B. Roldan ◽  
F. Gamiz ◽  
J. A. Lopez-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo ◽  
Inversion Layer ◽  
Channel Length ◽  
Electron Velocity ◽  
Normal Operation ◽  
Electron Dynamics ◽  
Drift Diffusion ◽  
Operation Conditions ◽  
Non Local ◽  
Monte Carlo Simulator

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels

1984 ◽  
pp. 107-113
Author(s):  
Hao Chu ◽  
M. Charef ◽  
J. Zimmermann ◽  
R. Fauquembergue ◽  
E. Constant
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Dynamics
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