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New versatile and easy selective boron diffusion
2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
◽
10.1109/smicnd.2000.890208
◽
2002
◽
Author(s):
C. Liiceanu
◽
M. Niculae
◽
M. Rauta
Keyword(s):
Boron Diffusion
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Numerical study of boron diffusion in CMT and related thermal fatigue near cold legs of an AP1000 nuclear power unit
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10.1016/j.pnucene.2020.103592
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Boron Diffusion
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Influence of annealing on boron diffusion from obliquely sputtered Co60Fe20B20 thin films
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2020
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Author(s):
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Boron Diffusion
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Promotion of boron diffusion and gettering by employing thin Al2O3 layer as a reaction barrier
Journal of Materials Science Materials in Electronics
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Boron Diffusion
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Al2o3 Layer
◽
Reaction Barrier
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An investigation of silicon boride surface layer resulting from boron diffusion in silicon
2012 38th IEEE Photovoltaic Specialists Conference
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10.1109/pvsc.2012.6317618
◽
2012
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Author(s):
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◽
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◽
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A K Kapoor
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A Dhaul
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...
Keyword(s):
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Boron Diffusion
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Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC
Applied Physics Letters
◽
10.1063/1.2968306
◽
2008
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Vol 93
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◽
pp. 052101
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P. G. Muzykov
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Vapor Phase
◽
Boron Diffusion
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Atomistic Modeling for Retardation of Boron Diffusion and Dominant BmInClusters in Pre-doped Silicon
2005 International Conference On Simulation of Semiconductor Processes and Devices
◽
10.1109/sispad.2005.201475
◽
2005
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Author(s):
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◽
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◽
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◽
Byeong-Jun Kim
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Atomistic Modeling
◽
Boron Diffusion
◽
Doped Silicon
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Measurement and modeling of boron diffusion in Si and strained Si1−xGexepitaxial layers during rapid thermal annealing
Journal of Applied Physics
◽
10.1063/1.354209
◽
1993
◽
Vol 74
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◽
pp. 5520-5526
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◽
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Thermal Annealing
◽
Rapid Thermal Annealing
◽
Boron Diffusion
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Mathematical modeling of boron diffusion from boron oxide glass film sources
AIChE Journal
◽
10.1002/aic.690340907
◽
1988
◽
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◽
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Author(s):
Andrew Yeckel
◽
Stanley Middleman
Keyword(s):
Mathematical Modeling
◽
Boron Oxide
◽
Oxide Glass
◽
Glass Film
◽
Boron Diffusion
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A continuous and general model for boron diffusion during post-implant annealing including damaged and amorphizing conditions
IEEE Transactions on Semiconductor Manufacturing
◽
10.1109/66.484283
◽
1996
◽
Vol 9
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◽
pp. 59-66
◽
Cited By ~ 1
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B. Baccus
◽
E. Vandenbossche
Keyword(s):
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◽
Boron Diffusion
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Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator
Journal of Applied Physics
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10.1063/1.3369160
◽
2010
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◽
pp. 074503
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