Influence of annealing on boron diffusion from obliquely sputtered Co60Fe20B20 thin films

2020 ◽  
Author(s):  
Nanhe Kumar Gupta ◽  
Vineet Barwal ◽  
Sajid Husain ◽  
Lalit Pandey ◽  
Soumyarup Hait ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Diffusion

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon

Electron Energy-loss Spectroscopy Study on Boron Diffusion in Free Layer of Tunneling Magnetoresistance Thin Films with Ti Capping Layers

2012 ◽  
Vol 18 (S2) ◽  
pp. 1850-1851
Author(s):  
L. Chen ◽  
C. Yang ◽  
Q. Leng ◽  
H. Wang
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Tunneling Magnetoresistance ◽  
Boron Diffusion ◽  
Spectroscopy Study ◽  
Free Layer ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Boron Diffusion in Bulk Cobalt Disilicide

1990 ◽  
Vol 187 ◽  
Author(s):  
P. Gas ◽  
C. Zaring ◽  
B.G. Svensson ◽  
M. Östling ◽  
H.J. Whitlow ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Activation Energy ◽  
Surface Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Diffusion ◽  
Boron Diffusion ◽  
Cobalt Disilicide ◽  
Boron Distribution ◽  
Secondary Ion

AbstractThe lattice diffusion of boron in bulk cobalt disilicide has been studied at temperatures between 450 and 950°C. Two different diffusion sources, a deposited surface layer of boron and an implanted boron distribution, were used. The lattice diffusion coefficient has been deduced from the boron profiles measured by secondary ion mass spectrometry (SIMS); in the studied temperature range the coefficient varies between 6.2×10−17 and 3.0× 10−11 cm2/s with an activation energy of 2.0 eV. These values reveal a very rapid lattice diffusion and agree with results reported previously in the literature concerning redistribution of boron implanted in thin films of CoSi2, and it also emphasizes the important role played by interfaces during the boron redistribution.

Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+Metal-Oxide-Semiconductor Transistors Gates

2001 ◽  
Vol 40 (Part 1, No. 12) ◽  
pp. 6723-6727 ◽  
Author(s):  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Emmanuel Scheid ◽  
Pierre Temple Boyer ◽  
Laurent Jalabert
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Heavily Doped

Boron Diffusion in TaSi2 Thin Films

1998 ◽  
Vol 168 (1) ◽  
pp. 223-229
Author(s):  
R. Marmelstein ◽  
M. Sinder ◽  
J. Pelleg
Keyword(s):  
Thin Films ◽  
Boron Diffusion

scholarly journals Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films

AIP Advances ◽  
2013 ◽  
Vol 3 (7) ◽  
pp. 072129 ◽  
Author(s):  
G. Venkat Swamy ◽  
Himanshu Pandey ◽  
A. K. Srivastava ◽  
M. K. Dalai ◽  
K. K. Maurya ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Thermal Annealing ◽  
Boron Diffusion ◽  
Electrical And Magnetic Properties
Sign in / Sign up

Export Citation Format

Share Document