2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
Latest Publications

TOTAL DOCUMENTS

116

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Published By IEEE

0780358856

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A 150 mA LDO in 0.8 μm CMOS process

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890192 ◽

2002 ◽

Author(s):

C. Stanescu

Keyword(s):

Cmos Process

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Conduction via deep levels in hydrogen plasma treated Au-Si Schottky structures

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890207 ◽

2002 ◽

Author(s):

S. Simeonov ◽

E. Kafedjiiska ◽

A. Szekeres

Keyword(s):

Hydrogen Plasma ◽

Deep Levels

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Microphysical characterization and residual stress analysts of thin polyimide membranes on GaAs substrate, support for micromachined structures

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.889130 ◽

2002 ◽

Author(s):

I. Petrini ◽

A. Muller ◽

S. Iordanescu ◽

D. Vasilache ◽

G. Constantinidis ◽

...

Keyword(s):

Residual Stress ◽

Gaas Substrate ◽

Substrate Support ◽

Polyimide Membranes

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A new analytical design approach for membrane supported band-pass filters

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890225 ◽

2002 ◽

Author(s):

G. Bartolucci ◽

D. Neculoiu ◽

M. Dragoman ◽

R. Marcelli ◽

A. Muller

Keyword(s):

Design Approach ◽

Analytical Design ◽

Band Pass

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Behavioral synthesis at the device level

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890222 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Manolescu ◽

A.M. Manolescu

Keyword(s):

Behavioral Synthesis

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Using spectroellipsometry to examine multilayer gratings for sensors and photodetectors

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.889117 ◽

2002 ◽

Author(s):

N.L. Dmitruk ◽

O.I. Mayeva ◽

S.V. Mamykin ◽

O.B. Yastrubchak ◽

M. Klopfleisch

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New versatile and easy selective boron diffusion

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890208 ◽

2002 ◽

Author(s):

C. Liiceanu ◽

M. Niculae ◽

M. Rauta

Keyword(s):

Boron Diffusion

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Deep level transient spectroscopy characterization of porous GaP layers

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890204 ◽

2002 ◽

Author(s):

M. Calin

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Transient Spectroscopy

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Low-power oriented microcontroller architecture

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890221 ◽

2002 ◽

Author(s):

B. Mitu ◽

G. Stefan

Keyword(s):

Low Power

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Simulation study of a novel current limiting device: a vertical 6H-SiC etched AccuJFET

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486) ◽

10.1109/smicnd.2000.890218 ◽

2002 ◽

Author(s):

D. Tournier ◽

D. Planson ◽

P. Godigon ◽

M.L. Locatelli ◽

J.P. Chante ◽

...

Keyword(s):

Simulation Study ◽

Current Limiting

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2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 150 mA LDO in 0.8 μm CMOS process

Conduction via deep levels in hydrogen plasma treated Au-Si Schottky structures

Microphysical characterization and residual stress analysts of thin polyimide membranes on GaAs substrate, support for micromachined structures

A new analytical design approach for membrane supported band-pass filters

Behavioral synthesis at the device level

Using spectroellipsometry to examine multilayer gratings for sensors and photodetectors

New versatile and easy selective boron diffusion

Deep level transient spectroscopy characterization of porous GaP layers

Low-power oriented microcontroller architecture

Simulation study of a novel current limiting device: a vertical 6H-SiC etched AccuJFET

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
Latest Publications