RF MEMS based impedance matching networks for tunable multi-band microwave low noise amplifiers

In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7–5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.

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Wideband asymmetrical bandpass LC-ladder matching networks for low-noise amplifiers

2008 15th IEEE International Conference on Electronics, Circuits and Systems ◽

10.1109/icecs.2008.4675018 ◽

2008 ◽

Author(s):

Antonio Carlos M. de Queiroz

Keyword(s):

Low Noise ◽

Low Noise Amplifiers ◽

Matching Networks

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Design of reconfigurable multi-band low-noise amplifiers for 802.11ah/b/g and DCS-1800 applications

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153201 ◽

2020 ◽

Vol 120 ◽

pp. 153201

Author(s):

Rajani Bisht ◽

M.J. Akhtar ◽

S. Qureshi

Keyword(s):

Low Noise ◽

Low Noise Amplifiers ◽

Multi Band

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Bandwidth Analysis of a Broadband Amplifier with Two-Stage Matching System Using the Smith Chart

Bulletin of Kalashnikov ISTU ◽

10.22213/2413-1172-2021-3-53-60 ◽

2021 ◽

Vol 24 (3) ◽

pp. 53-60

Author(s):

A.A. Sherstneva

Keyword(s):

Noise Figure ◽

Impedance Matching ◽

Low Noise ◽

Low Noise Amplifiers ◽

Matching Problem ◽

Two Stage ◽

Analysis And Design ◽

Design Variables ◽

Stage Matching ◽

Smith Chart

This paper describes a novel trace structure for the analysis and design of two-stage Broadband Frequency Low Noise Amplifiers based on standard Smith chart procedures and program algorithm realization. The method allows to put the transistor's S-parameters and details of the source and load networks and to interactively explore the effects of these quantities on design variables such as gain, noise figure and stability. It also facilitates the design of two-element matching networks to transform the source and load impedances to optimum values to achieve the desired gain and noise performance. The extended Smith chart concept is proposed to enable the advanced graphical interpretation of devices containing complex properties. This methodology is based on the Smith chart concept, and makes it easy to deal with devices containing signal sources, nonlinearity, very high Q factors and negative resistances. The concept of explaining the use of the Smith chart in combination with using modern tools as MATLAB scripts is exemplified in graphical forms. Phyton-based program contains the algorithm for parameters calculation. It explains the procedure that must be used to solve the two-stage impedance-matching problem. The point of this proposal is using of Smith chart plane for the graphical processing for its application to oscillator analysis. To demonstrate the effective usage of this methodology an interpretation and analysis of the oscillator, especially in terms of gain, noise and stability, are provided. The practical relevance concludes results of multistage design using impedance matching LC networks for the intersection level. The values of the parameters of the integrated microcircuit confirm the possibility of using the calculation methodology considered in the paper. The proposed solution is validated with extensive RF measurements at 3.5 GHz and is benchmarked against several frequency ranges for noise, stability and gain values. The methodology shown in the paper can be used in the development and design of modern microwave amplifiers, as well as for research and analysis of the efficiency of existing devices.

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