Correction [to "High speed photodiode signal enhancement at avalanche breakdown voltage"]

1965 ◽  
Vol 12 (4) ◽  
pp. 231-231 ◽  
Author(s):  
Kenneth M. Johnson
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Signal Enhancement ◽  
Avalanche Breakdown ◽  
Photodiode Signal ◽  
Avalanche Breakdown Voltage

scholarly journals Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
Jack Jia-Sheng Huang ◽  
H. S. Chang ◽  
Yu-Heng Jan ◽  
C. J. Ni ◽  
H. S. Chen ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Breakdown Voltage ◽  
Dark Current ◽  
High Speed ◽  
Impact Ionization ◽  
Low Noise ◽  
Bandgap Energy ◽  
Avalanche Breakdown ◽  
Recombination Mechanism ◽  
Avalanche Breakdown Voltage

Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. In this work, we study the temperature dependence of the breakdown voltage and dark current of the mesa-type APD over a wide temperature range of 20–145°C. We institute an empirical model based on impact ionization processes to account for the experimental data. It is shown that highly stable breakdown characteristics of mesa-type APD can be attained with the optimization of the multiplication layer design. We have achieved excellent stability of avalanche breakdown voltage with a temperature coefficient of 0.017 V/°C. The temperature dependence of dark current is attributed to generation-recombination mechanism. The bandgap energy is estimated to be about 0.71 eV based on the temperature variation of dark current, in good agreement with the value for InGaAs.

Avalanche breakdown voltage of GaAs hyperabrupt junctions

1981 ◽  
Vol 24 (12) ◽  
pp. 1155-1160 ◽  
Author(s):  
Azuma Shimizu ◽  
Tashika Koshimizu
Keyword(s):  
Breakdown Voltage ◽  
Avalanche Breakdown ◽  
Avalanche Breakdown Voltage
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