Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V

Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 μm range

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343502 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Biesemans ◽

S. Kubicek ◽

K. De Meyer

Keyword(s):

Figure Of Merit

Optimum scaling of non-symmetric Jacobian matrices for threshold pivoting preconditioners

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343476 ◽

2002 ◽

Cited By ~ 3

Author(s):

C. Fischer ◽

S. Selberherr

Keyword(s):

Jacobian Matrices

Modeling of Ti physical vapor deposition systems

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343495 ◽

2002 ◽

Author(s):

D.S. Bang ◽

J.P. McVittie ◽

M.M. Islamraja ◽

K.C. Saraswat ◽

Z. Krivokapic ◽

...

Keyword(s):

Vapor Deposition ◽

Physical Vapor Deposition

Automatic discretization and analytical Jacobian generation for device simulation using a physical-model description language

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343470 ◽

2002 ◽

Author(s):

J. Litsios ◽

W. Fichtner

Keyword(s):

Physical Model ◽

Device Simulation ◽

Model Description ◽

Description Language

Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343479 ◽

2002 ◽

Cited By ~ 1

Author(s):

H. Puchner ◽

S. Selberherr

Keyword(s):

Grain Growth ◽

Dopant Diffusion ◽

Dynamic Grain Growth ◽

Static Clustering

Grid evolution for oxidation simulation using a quadtree based grid generator

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343468 ◽

2002 ◽

Cited By ~ 2

Author(s):

Z.H. Sahul ◽

E.W. McKenna ◽

R.W. Dutton

Atomistic models of vacancy-mediated dopant diffusion in silicon at high doping levels

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343481 ◽

2002 ◽

Author(s):

S.T. Dunham ◽

Can Dong Wu

Keyword(s):

Dopant Diffusion ◽

Atomistic Models

Convergence properties of relaxation versus the surface-Newton generalized-conjugate residual algorithm for self-consistent electromechanical analysis of 3-D micro-electro-mechanical structures

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343472 ◽

2002 ◽

Cited By ~ 11

Author(s):

H. Yie ◽

X. Cai ◽

J. White

Keyword(s):

Convergence Properties ◽

Self Consistent ◽

Residual Algorithm ◽

Conjugate Residual

Two-dimensional energy-dependent substrate current models for deep submicron MOSFETs

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343501 ◽

2002 ◽

Cited By ~ 1

Author(s):

C.-F. Yeap ◽

K. Hasnat ◽

V.M. Agostinelli ◽

T.J. Bordelon ◽

S. Jallepalli ◽

...

Keyword(s):

Deep Submicron ◽

Two Dimensional ◽

Substrate Current ◽

Energy Dependent

Phenomenological modeling of plasma generation for real-time control of RIE systems

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343497 ◽

2002 ◽

Cited By ~ 3

Author(s):

M. Chandhok ◽

M.D. Giles ◽

P.D. Hanish ◽

J.W. Grizzle

Keyword(s):

Real Time ◽

Real Time Control ◽

Phenomenological Modeling ◽

Plasma Generation ◽

Time Control

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 μm range

Optimum scaling of non-symmetric Jacobian matrices for threshold pivoting preconditioners

Modeling of Ti physical vapor deposition systems

Automatic discretization and analytical Jacobian generation for device simulation using a physical-model description language

Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

Grid evolution for oxidation simulation using a quadtree based grid generator

Atomistic models of vacancy-mediated dopant diffusion in silicon at high doping levels

Convergence properties of relaxation versus the surface-Newton generalized-conjugate residual algorithm for self-consistent electromechanical analysis of 3-D micro-electro-mechanical structures

Two-dimensional energy-dependent substrate current models for deep submicron MOSFETs

Phenomenological modeling of plasma generation for real-time control of RIE systems

Export Citation Format

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD VLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 μm range

Optimum scaling of non-symmetric Jacobian matrices for threshold pivoting preconditioners

Modeling of Ti physical vapor deposition systems

Automatic discretization and analytical Jacobian generation for device simulation using a physical-model description language

Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

Grid evolution for oxidation simulation using a quadtree based grid generator

Atomistic models of vacancy-mediated dopant diffusion in silicon at high doping levels

Convergence properties of relaxation versus the surface-Newton generalized-conjugate residual algorithm for self-consistent electromechanical analysis of 3-D micro-electro-mechanical structures

Two-dimensional energy-dependent substrate current models for deep submicron MOSFETs

Phenomenological modeling of plasma generation for real-time control of RIE systems

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V
Latest Publications