High light output-power single-longitudinal-mode semiconductor laser diodes

1985 ◽  
Vol 32 (12) ◽  
pp. 2594-2602 ◽  
Author(s):  
K. Kobayashi ◽  
I. Mito
2014 ◽  
Vol 26 (16) ◽  
pp. 1649-1652 ◽  
Author(s):  
Heng-Jui Chang ◽  
Tzu-Hsuan Huang ◽  
Chia-Lung Tsai ◽  
Chong-Long Ho ◽  
Meng-Chyi Wu

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1563
Author(s):  
Srinivas Gandrothula ◽  
Haojun Zhang ◽  
Pavel Shapturenka ◽  
Ryan Anderson ◽  
Matthew S. Wong ◽  
...  

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.


2017 ◽  
Vol 29 (24) ◽  
pp. 2203-2206 ◽  
Author(s):  
Jianping Liu ◽  
Liqun Zhang ◽  
Deyao Li ◽  
Kun Zhou ◽  
Yang Cheng ◽  
...  

2017 ◽  
Vol 62 (24) ◽  
pp. 1637-1638 ◽  
Author(s):  
Jie Lin ◽  
Yongsheng Hu ◽  
Ying Lv ◽  
Xiaoyang Guo ◽  
Xingyuan Liu

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  

1999 ◽  
Vol 43 (1) ◽  
pp. 33-39 ◽  
Author(s):  
S.M.K. Thiyagarajan ◽  
A.F.J. Levi

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